Impact of narrow trench geometries on copper film crystallography

Plasma deposition and characterization technologies for structural and coverage optimization of materials for nanopatterned devices

“…If Cu recrystallization in trenches proceeds to completion, the Cu texture is oriented with respect to the trench floor normal and referred to as (111) [110] where the (111) planes are parallel to the surface normal and the [110] direction is parallel to the trench direction (Brunoldi et al, 2006). If b-Ta is present on a sidewall, however, the texture of the Cu seed layer on the sidewall is expected to exhibit stronger (111) texture than if the sidewall was a-Ta.…”

Advanced X-ray diffraction metrology as a means of improving semiconductor device reliability

“…After Cu recrystallization in trenches, the Cu texture is typically oriented with respect to the trench floor normal and referred to as (111)[110] ((111) planes parallel to the surface and [110] direction oriented along the trench direction) [9]. However, if beta Ta is present on a wall then recrystallization will be inhibited and remnants of the Cu seed layer may remain after annealing [9].…”

“…However, if beta Ta is present on a wall then recrystallization will be inhibited and remnants of the Cu seed layer may remain after annealing [9]. Per the discussion in the preceding paragraph, trenches perpendicular to the radial direction near (111)[110] texture is concentrated on the outside (center-facing) wall covered with proper TaN/alpha-Ta bilayer.…”

“…While pole figures can take several hours to collect, mapping the intensity of floor texture across a wafer provides a means for rapid measurement that is compatible with production requirements. When that measurement is performed trenches perpendicular to the radial direction are seen to exhibit much weaker floor texture than trenches near the wafer center or trenches parallel to the radial direction [9]. Why is it important to be able to detect residual sidewall as line widths are decreased?…”

Modeling grain growth and related phenomena with vertex dynamics

“…. ) usually adopt this dense plane [2,23,24]. Depending on the value of the interface energy advantage given to welloriented grains for a given ratio of the band width and the mean grain size, the 111 texture can vanish or on the contrary develop as shown in Fig.…”