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We report a measurement of the D* + and Z>*° decay branching fractions based on 780 pb _l of data collected with the CLEO II detector. For radiative D* + decay, we obtain an upper limit, J8(Z)* + -• D*y) <4.2% (90% confidence level), which is substantially below previous results, and eliminates the need for an anomalously large charm quark magnetic moment.

An enhancement has been observed in the inclusive cross section for direct single electrons produced in e*e~ annihilations at the T(4S). This is interpreted as evidence for a new weakly decaying particle, the B meson. A branching ratio for B -Xev of ll3± 3 (±3)]% is inferred, where the first set of errors is statistical and the estimated systematic error is enclosed in parentheses.PACS numbers: 14.40.Pe, 13.20.Jf, 13.65.+ iThe recently discovered resonance in e*e~ annihilations at 10.55 GeV total energy 1 ' 2 has a natural interpretation as the T (4S) bound state of bfi quarks. Its width indicates that this state is above the threshold for producing pairs of B mesons, bound states of b quarks with u or i? quarks, and has as its dominant decay mode BB meson final states. 3 The existence of a new, weakly decaying flavor can be inferred from the semileptonic decay B-+Xlv and the branching ratio (BR) for this 84

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Articles you may be interested inHighly-ionized metal plasma source for integrated circuit metallization AIP Conf.Design and tests of the new partially ionized beam source Rev. Sci. Instrum. 67, 4114 (1996); 10.1063/1.1147578Study on the interfaces of Cu/PAN and PAN/Si by secondary ion mass spectroscopy and scanning electron microscopy J.It is shown that a peel strength of larger than 70 g/mm adhesion can be achieved between Cu and Parylene-N surfaces using the partially ionized beam ͑PIB͒ deposition technique while the conventional deposition techniques such as thermal evaporation, e-beam evaporation, and sputtering give no measurable adhesion. With the PIB process, neither an adhesion enhancement layer nor substrate pretreatment is required. In the PIB deposition, up to 5% of self-ions and 3 kV substrate bias were used during deposition. Secondary-ion-mass spectroscopy revealed a Cu-Parylene-N intermixed layer located at the Cu/Parylene-N interface. It is proposed that the mechanical interlocking provided by the graded interface region may play a role for the observed adhesion enhancement.