Impact of Oxygen Reservoir Layer on 3T Oxygen Ion‐based Electrochemical Random Access Memory Performance

Abstract

This study investigates the impact of an oxygen reservoir layer on the performance of three-terminal (3T) oxide ion-based electrochemical random access memory (Ox-ECRAM). Three Ox-ECRAM synapse devices are compared: single layer, double 1, and double 2. The results indicate that the oxygen reservoir layer is crucial for maintaining channel conductance while preventing gate leakage. The oxygen reservoir layer also modulates conductance via the absorption and supply of oxygen ions. In addition, the ion migration barrier energy of the oxygen reservoir layer plays a key role in the reliability of the Ox-ECRAM, with higher values leading to more stable retention and endurance. The results of this study highlight the importance of the oxygen reservoir layer in Ox-ECRAM performance.