Impact of Pad–Wafer Contact Area in Chemical Mechanical Polishing

Yeruva, Suresh B.; Park, Chang-Won; Rabinovich, Ya. I.; Moudgil, Brij M.

doi:10.1149/1.3186032

Cited by 23 publications

(18 citation statements)

References 38 publications

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“…In the asperity scale model, one or more particles are trapped at the wafer-asperity interface. Only the particles embedded in the asperity contribute to material removal in CMP, and they can therefore be defined as active particles [54]. The asperity deformation and contact area are calculated to evaluate the Fig.…”

Section: (B) Asperity Scale Modelmentioning

confidence: 99%

Chemical mechanical polishing: Theory and experiment

Zhao

2013

Friction

164

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For several decades, chemical mechanical polishing (CMP) has been the most widely used planarization method in integrated circuits manufacturing. The final polishing results are affected by many factors related to the carrier structure, the polishing pad, the slurry, and the process parameters. As both chemical and mechanical actions affect the effectiveness of CMP, and these actions are themselves affected by many factors, the CMP mechanism is complex and has been a hot research area for many years. This review provides a basic description of the development, challenges, and key technologies associated with CMP. We summarize theoretical CMP models from the perspectives of kinematics, empirical, its mechanism (from the viewpoint of the atomic scale, particle scale, and wafer scale), and its chemical-mechanical synergy. Experimental approaches to the CMP mechanism of material removal and planarization are further discussed from the viewpoint of the particle wear effect, chemical-mechanical synergy, and wafer-pad interfacial interaction.

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Section: (B) Asperity Scale Modelmentioning

confidence: 99%

Chemical mechanical polishing: Theory and experiment

Zhao

2013

Friction

164

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“…Some researchers [20], [21] have investigated the number of active particles, whereas others [22], [23] have conducted some experimental studies on the contact ratio of the pad asperities. Based on these studies, it can be predicted that the effective particle number is more than 1,000,000.…”

Section: Kinematic Optimization Based On Trajectorymentioning

confidence: 99%

Kinematic Optimization for Chemical Mechanical Polishing Based On Statistical Analysis of Particle Trajectories

Zhao

Wang

et al. 2013

IEEE Trans. Semicond. Manufact.

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The abrasive effect of particles is one of the basic mechanical actions in chemical mechanical polishing (CMP). In this paper, numerical simulations of particle sliding trajectories are performed to examine the influence of the kinematic parameters on the polishing uniformity of typical rotary-type CMP equipment. The trajectory simulations are carried out based on the kinematic analysis. The results reveal that the speed ratio α and the period ratio k T 0 , which represent the coupling relationships among the three basic motions of CMP, are the two major factors affecting the trajectory distribution. Further, a trajectory density parameter is proposed to quantitatively evaluate the global uniformity of the trajectory distributions and to optimize the kinematic parameters for better uniformity. The statistical results of the trajectory density analysis reveal that the trajectory of the wafer edge is denser than that of the wafer central area. To obtain better trajectory uniformity, some particular values of α and k T 0 , that is, α = 1 and k T 0 = 1, which imply that the basic motions have a special coupling relationship, should be excluded; the preferred kinematic parameter values for CMP are α = 0.91∼0.93 and k T 0 = 5∼7. This paper provides a basic guide to the kinematic parameter settings of CMP.

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“…Based on the study of the pad and wafer surface interaction [11,12], the assumption here is that the collision that leads to the removal of the oxide layer can only occur at the pad asperity (or contact area). The pad used in this study was carefully examined by optical interferometry, similar to the instrument used in the study of Stein et al [13].…”

Section: Preliminary Estimation Of Collision Frequencymentioning

confidence: 99%

Removal Mechanism of Tungsten CMP Process: Effect of Slurry Abrasive Concentration and Process Temperature

Wang¹,

Peng²,

Xia³

et al. 2012

ECS Trans.

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This work studied the removal mechanism of a tungsten chemical mechanical planarization (CMP) process on a dual head polishing platform. The two key parameters studied were slurry abrasive concentration and process temperature. The removal rate was observed to scale with the cubic root of the abrasive concentration. The polishing temperature showed a linear relation with the removal rate in the temperature controlled experiment. A potential mechanism was explored for the removal of the tungsten film to explain the experimental results.

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Impact of Pad–Wafer Contact Area in Chemical Mechanical Polishing

Cited by 23 publications

References 38 publications

Chemical mechanical polishing: Theory and experiment

Chemical mechanical polishing: Theory and experiment

Kinematic Optimization for Chemical Mechanical Polishing Based On Statistical Analysis of Particle Trajectories

Removal Mechanism of Tungsten CMP Process: Effect of Slurry Abrasive Concentration and Process Temperature

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