2021
DOI: 10.1021/acsami.1c06765
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Impact of Pregrown SiOx on the Carrier Selectivity and Thermal Stability of Molybdenum-Oxide-Passivated Contact for Si Solar Cells

Abstract: Thin SiO x interlayers are often formed naturally during the deposition of transition metal oxides on silicon surfaces due to interfacial reaction. The SiO x layer, often only several atomic layers thick, becomes the interface between the Si and deposited metal oxide and can therefore influence the electrical properties and thermal stability of the deposited stack. This work explores the potential benefits of controlling the properties of the SiO x interlayer by the introduction of pregrown high-quality SiO… Show more

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Cited by 16 publications
(16 citation statements)
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“…from the SiO x layer which formed spontaneously during the deposition of CTL materials (mainly metal oxides). Compared to the latter, the former shows comparatively better controllability, thermal stability, and surface passivation 163,168,191–193 . By inserting a tunnel SiO 2 layer, Yang et al achieved an impressive efficiency improvement in c‐ Si solar cells with TiN as ETL 59 .…”
Section: Performance Optimization Of Dopant‐free Passivating Contact ...mentioning
confidence: 99%
See 4 more Smart Citations
“…from the SiO x layer which formed spontaneously during the deposition of CTL materials (mainly metal oxides). Compared to the latter, the former shows comparatively better controllability, thermal stability, and surface passivation 163,168,191–193 . By inserting a tunnel SiO 2 layer, Yang et al achieved an impressive efficiency improvement in c‐ Si solar cells with TiN as ETL 59 .…”
Section: Performance Optimization Of Dopant‐free Passivating Contact ...mentioning
confidence: 99%
“…Several studies also reported that the insertion of passivation layers such as a tunnel SiO 2 or Al 2 O 3 between HTL and c ‐Si helps improve stability in addition to improving efficiency 55,159 . Tong and colleagues explored the effect of an ultra‐thin SiO x film on the electrical properties and thermal stability of the MoO x ‐based passivating contacts 191 . Compared with naturally formed SiO x , pre‐grown chemical or thermal SiO x on c ‐Si can better maintain the high oxygen content in the deposited MoO x , which can be inferred from the larger ratio of Mo with a higher oxidation state seen in the XPS spectra (Figure 11A–C).…”
Section: Performance Optimization Of Dopant‐free Passivating Contact ...mentioning
confidence: 99%
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