Thin SiO
x
interlayers are often formed
naturally during the deposition of transition metal oxides on silicon
surfaces due to interfacial reaction. The SiO
x
layer, often only several atomic layers thick, becomes the
interface between the Si and deposited metal oxide and can therefore
influence the electrical properties and thermal stability of the deposited
stack. This work explores the potential benefits of controlling the
properties of the SiO
x
interlayer by the
introduction of pregrown high-quality SiO
x
which also inhibits the formation of low-quality SiO
x
from the metal-oxide deposition process. This work
demonstrates that a high-quality pregrown SiO
x
can reduce the interfacial reaction and results in a more
stoichiometric MoO
x
with improved surface
passivation and thermal stability linked to its lower D
it. Detailed experimental data on carrier selectivity,
carrier transport efficiency, annealing stability up to 250 °C,
and in-depth material analysis are presented.
grain (Note S1, Supporting Information), which indicated that those new perovskite phases likely contained 4M-PEACl. We noted that no Cl signal was detected at the grain interior of the perovskite films according to the EDS results. Although this
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