Impact of program/erase operation on the performances of oxide-based resistive switching memory

Wang, Guo‐Ming; Long, Shibing; Yu, Zhibin; Zhang, Meiyun; Li, Yang; Xu, Daolin; Lv, Hangbing; Liu, Qi; Yan, Xiaobing; Wang, Ming; Xu, Xiaoxin; Liu, Hongtao; Bin, Yang; Liu, Ming

doi:10.1186/s11671-014-0721-2

Cited by 40 publications

(22 citation statements)

References 23 publications

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“…This large electric field produces nonlinear drifting of vacancies near the boundary interfaces, which further results in high nonlinearity in the I-V characteristics. The increase in the loop area with an increase in the bias is in good agreement with the experimental result reported in the literature for different active layer materials and device structures [24,25].…”

Section: Effect Of Write Voltage and Frequency On Memristor-based Rramsupporting

confidence: 91%

Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

et al. 2017

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In this paper, we report the effect of the write voltage and frequency on memristor-based resistive random access memory (RRAM). The above-said parameters have been investigated on the linear drift model of the memristor. With a variation of write voltage from 0.2 to 1.2 V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz, the corresponding effects on memory window, low resistance state (LRS) and high resistance state (HRS) have been reported. Thus, the lifetime (s) reliability analysis of memristor-based RRAM is carried out using the above results. It is found that the HRS is independent of the write voltage, whereas LRS shows dependency on write voltage and frequency. The simulation results showcase the fact that the memristor possesses higher memory window and lifetime (s) in the higher voltage with lower frequency region, which has been attributed to less data losses in the memory architecture.

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Section: Effect Of Write Voltage and Frequency On Memristor-based Rramsupporting

confidence: 91%

Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

et al. 2017

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“…Figure 6c shows the coefficient of variation (r/l) (where r is the standard deviation and l is the mean value) of V set and HRS distributions. The lower value of r/l means a narrower distribution of the parameter [29]. The results showed that the V set distribution becomes narrower when the HRS distribution is tighter.…”

Section: Resultsmentioning

confidence: 82%

“…Statistical analysis was used to elucidate the trend of the memory window [29]. Figure 6a shows the cumulative probability plots of the HRS distribution.…”

Section: Resultsmentioning

confidence: 99%

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

et al. 2015

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The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than 10 4 cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration.

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“…No abrupt switch is observed, since the current sweep results in a controllable gradual set process. [34] A more gentle set operation was necessary, since the thin Al 2 O 3 layer easily breaks by a filamentary mechanism, [35] which had to be avoided here. These devices are referred to as Pt/ZTO/Al 2 O 3 /Ti/Au.…”

Section: Resultsmentioning

confidence: 99%

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Branca

Deuermeier

Martins

et al. 2019

Adv Elect Materials

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of less destructive switching events, since the device reliability is independent of the reproducibility of the filament formation. [6] Frequently, an analog switching is observed, which is applicable for neuromorphic systems. [7][8][9][10] Reports exist in the literature, which explore area-dependent switching involving the homogeneous migration of defects or ions through the thickness of the switching matrix. [11,12] This can be referred to as 3D RS. In a device with asymmetric electrodes, both 1D RS and 3D RS result in counter eightwise (c8w) switching loops, when the bias is applied to the current blocking electrode. [13] Another type of area-dependent RS exists when ions are exchanged (or trapping occurs at the interface) between the switching matrix and the electrode. If the current transport through this interface is modulated as a consequence of the ion exchange/trapping, then this can be referred to as 2D RS. The direction of the switching loops is opposite to 1D RS and 3D RS, that is, eightwise (8w) when the bias is applied to the current blocking electrode. Frequently, 2D volatile switching has been observed as a secondary process, affecting the high resistive state (HRS) of an otherwise 1D RS device. [14][15][16][17] In addition, the choice between digital and analog operation modes by different device initialization schemes has been reported for NiO-based devices. [18] However, the resistance window for the analog mode was below one order of magnitude and the mechanism was discussed as 3D RS.Both in 3D RS and 2D RS, the active interface represents a barrier to the current flow, for example, a Schottky junction. [19] In the case of Ti/Pr 0.7 Ca 0.3 MnO 3 (PCMO) devices the underlying mechanism is based on a redox reaction between the titanium oxide interlayer and the PCMO. [20,21] In oxide-based devices with a platinum Schottky barrier bottom electrode, electronic trapping at interface states was proposed as a mechanism. [15] To allow a sizeable data retention, structural stabilization of the trapped charge needs to occur. [22] To achieve a high ratio between HRS and low resistance state (LRS) in 3D and 2D RS, a highly mobile Fermi level, that is, a highly variable charge carrier concentration is desirable. In thin-film transistors (TFT), AOS are known to yield tremendously high on/off ratios. [23] Diodes of AOS have rectification ratios of 10 6 . [24] These applications show how the material is able to change from an insulator to a metallic conductor by A room-temperature-processed resistive switching Schottky diode that can be operated in two distinct modes, depending solely on the choice of device initialization mode, is presented. Electroforming in the diode's reverse polarity leads to an abrupt filamentary switching with inherently long data retention at the expense of rectification. After this electroforming process, the devices may work in either a bipolar or unipolar manner with a resistance window of at least two orders of magnitude. Device initialization in the forward direction shows a smoo...

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Impact of program/erase operation on the performances of oxide-based resistive switching memory

Cited by 40 publications

References 23 publications

Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

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