“…In this section, the influence of Si surface roughness on the MOSFET characteristics is described [37,38,39]. The nMOSFETs with HfON gate insulator were fabricated on p-Si(100) substrates by typical gate-last process as follows [38,39]. After the isolation of active region by local oxidation of Si (LOCOS) process, the channel stopper was formed below field oxide (BF 3 , 100 keV, 1 Â 10 14 cm !2 ).…”