Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Abstract

International audienceIn this paper we investigate the Total Ionizing Dose (TID) response of an UltraThin Buried-OXide (UTBOX) on a Fully Depleted Silicon-On-Insulator (FDSOI) high-k/metal gate technology. The impact of thinning the BOX and of the use of a Ground Plane (GP) at the back side of the BOX on the TID behavior are discussed by comparing their results to ionizing radiation experiments performed on reference FDSOI devices

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

“…Excellent agreement is obtained between the model calculations and extractions from TCAD in capturing the dependence of on radiation-induced defects at the BOX/Si interface as a function of . It should be noted that these results are consistent with recent experimental investigations and extractions of from irradiated FDSOI transistors [71] where an observed "turn around" in the threshold voltage shift indicates charge compensation from interface traps. The results in Fig.…”

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2Gate Dielectrics

“…Vth shift from pre-irradiation to 500 krad(SiO2), and a positive Vth shift with increasing TID from 500 krad(SiO2) to 2 Mrad(SiO2). The decrease in Vth for doses below 500 krad(SiO2) is due to radiation-induced trapped positive charges in the buried oxide (BOX) [25], [26], [81], as shown schematically in Fig. 2(a).…”

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

“…The front gate threshold voltage shift (V th_front ) in devices with BOX thickness, T BOX = 145 nm and Si film thickness, T Si = 8 nm, has shown a bias dependence during irradiation with transmission gate being the worst bias condition due to the distribution of the electric field lines in the BOX [30], [31]. V th_front as a function of total dose for different bias conditions is shown in Fig.…”

“…In these devices, although the leakage current is reduced, strong coupling between front and back transistors is induced, equivalent to ETSOI and FDSOI in general, and therefore there is no advantage in their use, while GP doping schemes do not alter the response significantly [30], [31].…”