2014
DOI: 10.1063/1.4894841
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Impact of strain on electronic defects in (Mg,Zn)O thin films

Abstract: We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y 2 , previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively s… Show more

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Cited by 3 publications
(7 citation statements)
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“…Experimental evidence for E3 being the oxygen vacancy is expected from irradiation/implantation experiments. But again, the published data and their interpretation is not coherent and different trends for the change of E3 concentration (including no change at all) were determined after irradiation/implantation or annealing experiments. A connection between E3 and VnormalO is not suggested by these experiments.…”
Section: Discussionmentioning
confidence: 96%
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“…Experimental evidence for E3 being the oxygen vacancy is expected from irradiation/implantation experiments. But again, the published data and their interpretation is not coherent and different trends for the change of E3 concentration (including no change at all) were determined after irradiation/implantation or annealing experiments. A connection between E3 and VnormalO is not suggested by these experiments.…”
Section: Discussionmentioning
confidence: 96%
“…We have characterized the properties of the deep level defect E3 in several earlier investigations . In these experiments bulk samples obtained from Tokyo Denpa as well as heteroepitaxial thin films grown by pulsed laser deposition were used.…”
Section: Methodsmentioning
confidence: 99%
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