Impact of sulfur and gallium gradients on the performance of thin film Cu(In,Ga)(Se,S)2 solar cells

Lavrenko, Tetiana; Ott, Thomas; Walter, Thomas

doi:10.1016/j.tsf.2014.11.024

Cited by 11 publications

(5 citation statements)

References 9 publications

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“…Therefore precursor and selenization conditions are optimized for appropriately homogenized Ga concentration profile in two‐step processed absorbers. However, for the highest efficiency solar cells an additional step of H 2 S annealing is used to form a selenium rich CIGSSe layer in order to reach high V OC values . CuInS 2 and CuGaS 2 have a bandgap of 1.53 and 2.49 eV, respectively, extending the systems range considerably.…”

Section: Some Recent Advancementsmentioning

confidence: 99%

Progress in thin film CIGS photovoltaics – Research and development, manufacturing, and applications

Feurer

Reinhard

Avancini

et al. 2016

Progress in Photovoltaics

283

186

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This review summarizes the current status of Cu(In,Ga)(S,Se) 2 (CIGS) thin film solar cell technology with a focus on recent advancements and emerging concepts intended for higher efficiency and novel applications. The recent developments and trends of research in laboratories and industrial achievements communicated within the last years are reviewed, and the major developments linked to alkali post deposition treatment and composition grading in CIGS, surface passivation, buffer, and transparent contact layers are emphasized. Encouraging results have been achieved for CIGS-based tandem solar cells and for improvement in low light device performance. Challenges of technology transfer of lab's record high efficiency cells to average industrial production are obvious from the reported efficiency values. One section is dedicated to development and opportunities offered by flexible and lightweight CIGS modules.

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Section: Some Recent Advancementsmentioning

confidence: 99%

Progress in thin film CIGS photovoltaics – Research and development, manufacturing, and applications

Feurer

Reinhard

Avancini

et al. 2016

Progress in Photovoltaics

283

186

View full text Add to dashboard Cite

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“…We thus could use Sb 2 (Se 1 − x S x ) 3 as the absorber with more desirable band gap than Sb 2 Se 3 . (ii) The alloyed Sb 2 (Se 1 − x S x ) 3 possesses composition‐dependent properties such as band gap and band position , enabling optimal band alignment at the heterojunction and back field grading at the back contact, similar to Ga alloying in CuInSe 2 thin film solar cells where a V‐shaped band diagram is engineered to obtain a best V OC × J SC product . One additional advantage is that Sb 2 Se 3 and Sb 2 S 3 compounds are isomorphous so that Sb 2 (Se 1 − x S x ) 3 can be easily and continuously formed from x = 0 for pure Sb 2 Se 3 to x = 1 for pure Sb 2 S 3 .…”

Section: Introductionmentioning

confidence: 99%

In situ sulfurization to generate Sb₂(Se_1 − xS_x)₃ alloyed films and their application for photovoltaics

Qin

Xue

et al. 2016

Progress in Photovoltaics

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Because of its tunable band gap and band position, Sb2(Se1 − xSx)3 (0 ≤ x ≤ 1) is a promising light‐absorbing material for photovoltaic device applications. However, no systematic study on the synthesis and characterization of single‐phase polycrystalline Sb2(Se1 − xSx)3 thin films has been reported. Through introducing in situ sulfurization into the rapid thermal evaporation process, a series of single‐phase, highly crystalline Sb2(Se1 − xSx)3 films with x = 0.09, 0.20, 0.31, and 0.43 were successfully obtained, with the corresponding band gap, band position and film morphology fully revealed. Futhermore, solar cells with superstrate ITO/CdS/Sb2(Se1 − xSx)3/Au structure were fabricated and carefully optimized. Finally, a champion device having 5.79% solar conversion efficiency was obtained employing uniform Sb2(Se0.80S0.20)3 absorber layer. Our experimental investigation confirmed that Sb2(Se1 − xSx)3 is indeed a very promising absorber material worth further optimization. Copyright © 2016 John Wiley & Sons, Ltd.

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“…Copper indium gallium diselenide (CIGS) thin-film solar cells exhibit excellent energy conversion efficiencies of up to 21.7%. 1) CIGS solar cells are mostly prepared in a substrate configuration [using a molybdenum (Mo)-coated glass], either by depositing the entire CIGS film by coevaporation or by a sequential process consisting of the deposition of CuGa=In multilayers and subsequent CIGS formation at a high temperature in a Se-containing environment. In the next step, the heterojunction is usually formed with a cadmium sulphide (CdS) buffer layer.…”

Section: Introductionmentioning

confidence: 99%

Effect of deposition pressure on the properties of magnetron-sputter-deposited molybdenum back contacts for CIGS solar cells

Yan

Aberle

et al. 2015

Jpn. J. Appl. Phys.

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Molybdenum (Mo) thin films were deposited onto soda-lime glass substrates by DC magnetron sputtering of a Mo target at various chamber pressures ranging from 1.5 × 10−3 to 7.5 × 10−3 mbar. The film properties were analysed with regards to their application as back electrode in copper indium gallium diselenide (CIGS) solar cells. It is observed that the resulting film morphology and microstructure were strongly affected by deposition pressure. Mo films deposited at a low pressure possess a high density and a low sheet resistance. These films also have a compact microstructure and a compressive strain, which lead to poor adhesion. The adhesion can be improved by increasing the chamber pressure, which has negative effects on the sheet resistance, optical reflection and porosity of the films. On the basis of these results, a method has been established to fabricate low-resistivity Mo films on soda-lime glass with very good adhesion for CIGS solar cell applications.

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Impact of sulfur and gallium gradients on the performance of thin film Cu(In,Ga)(Se,S)2 solar cells

Cited by 11 publications

References 9 publications

Progress in thin film CIGS photovoltaics – Research and development, manufacturing, and applications

Progress in thin film CIGS photovoltaics – Research and development, manufacturing, and applications

In situ sulfurization to generate Sb₂(Se_1 − xS_x)₃ alloyed films and their application for photovoltaics

Effect of deposition pressure on the properties of magnetron-sputter-deposited molybdenum back contacts for CIGS solar cells

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Impact of sulfur and gallium gradients on the performance of thin film Cu(In,Ga)(Se,S)2 solar cells

Cited by 11 publications

References 9 publications

Progress in thin film CIGS photovoltaics – Research and development, manufacturing, and applications

Progress in thin film CIGS photovoltaics – Research and development, manufacturing, and applications

In situ sulfurization to generate Sb2(Se1 − xSx)3 alloyed films and their application for photovoltaics

Effect of deposition pressure on the properties of magnetron-sputter-deposited molybdenum back contacts for CIGS solar cells

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In situ sulfurization to generate Sb₂(Se_1 − xS_x)₃ alloyed films and their application for photovoltaics