2021
DOI: 10.1016/j.apsusc.2020.147895
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Impact of surface defects in electron beam evaporated ZnO thin films on FET biosensing characteristics towards reliable PSA detection

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Cited by 23 publications
(12 citation statements)
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“…Beyond the electrochemical biosensors, SAMs play a significant role at the electronic interfaces across a broad range of devices, such as organic thin-film transistors (OTFTs), field-effect transistor (FET) biosensors, and other organic electronic devices. In OTFTs, for example, SAMs often serve as an active semiconductor layer, offering their ability to modify gate dielectrics and thus control the charge-carrier injection rates. For FET biosensors (in the same category as electrochemical biosensors), SAMs also serve as a blocking layer for antifouling purposes that could decrease the nonspecific adsorption of proteins and other interfering molecules , and improve the signal-to-noise ratio of electrochemical measurements via the extension of the electrode–electrolyte dielectric distance. Given this, we believe that our survey here of SAMs for E-AB sensor application would provide a guideline to rationally modify the interface with a desirable performance from a molecular level.…”
Section: Discussionmentioning
confidence: 99%
“…Beyond the electrochemical biosensors, SAMs play a significant role at the electronic interfaces across a broad range of devices, such as organic thin-film transistors (OTFTs), field-effect transistor (FET) biosensors, and other organic electronic devices. In OTFTs, for example, SAMs often serve as an active semiconductor layer, offering their ability to modify gate dielectrics and thus control the charge-carrier injection rates. For FET biosensors (in the same category as electrochemical biosensors), SAMs also serve as a blocking layer for antifouling purposes that could decrease the nonspecific adsorption of proteins and other interfering molecules , and improve the signal-to-noise ratio of electrochemical measurements via the extension of the electrode–electrolyte dielectric distance. Given this, we believe that our survey here of SAMs for E-AB sensor application would provide a guideline to rationally modify the interface with a desirable performance from a molecular level.…”
Section: Discussionmentioning
confidence: 99%
“…The schematic of the sensor and the process flow of fabrication are depicted in Figure 1a,b. 29 Functionalization of ZnO. For proper antibody immobilization, the silanization process was performed followed by cross-linker attachment.…”
Section: ■ Materials and Methodsmentioning
confidence: 99%
“…This method ensures repeatability of measurements. The schematic of the sensor and the process flow of fabrication are depicted in Figure a,b …”
Section: Methodsmentioning
confidence: 99%
“…The photoresist detector with surface arrayed electrodes is sensitive to the grain boundary defects . In order to investigate the behavior of defects at high temperature, the photoresist detectors were prepared and the measurement system was assembled as in Figure S18a.…”
Section: Crystal Structure Of the Hybrid Thin Filmsmentioning
confidence: 99%
“…The photoresist detector with surface arrayed electrodes is sensitive to the grain boundary defects. 36 In order to investigate the behavior of defects at high temperature, the photoresist detectors were prepared and the measurement system was assembled as in Figure S18a. The dark current results show that the TrMA device exhibits a relatively stable current, rather than the 5-fold increase in the control device, which results from the thermally induced traps (Figure S18b).…”
mentioning
confidence: 99%