Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35bm CMOS technology

Segmanovic, Filip; Roger, F.; Meinhardt, G.; Jonak-Auer, Ingrid; Suligoj, Tomislav

doi:10.23919/mipro.2018.8400003

Cited by 4 publications

(2 citation statements)

References 6 publications

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“…They were not corrected for the laser rise and fall times (57 ps and 187 ps, respectively). The rise and fall times of the photocurrent of device A drop below 1 ns at more than about 25 V, whereas device B possesses rise/fall times of less than 1 ns in the complete reverse voltage range from 15 V to 30 V. The dark current of an N-well/P-substrate photodiode was reported to be below 1 pA [22]. Values of around 3pA at 1.25 V reverse voltage and 50°C were published in [23] for 242 Nwell islands.…”

Section: Frequency and Transient Responsementioning

confidence: 98%

Ultra-Low Capacitance Spot PIN Photodiodes

2023

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Spot PIN photodiodes were integrated without any process modifications in a high-voltage 0.18 µm CMOS technology. These photodiodes are a combination of vertical and lateral PIN photodiodes using the P+ bulk wafer and a P-type ring at the surface as anodes. Devices with N+ cathode and N+/N-well cathode are compared. A small N+/N-well cathode spot reduces the capacitance to 1.47 fF and the N+ cathode spot leads to a capacitance of 1.07 fF. The light sensitive area of these photodiodes is 707 µm². Simulated electric field distributions show the full depletion of the spot PIN photodiodes. Responsivities from 0.12 A/W to 0.16 A/W and from 0.50 A/W to 0.52 A/W for 405 nm and 675 nm, respectively, are achieved. The measured bandwidths for 675 nm light are from 520 MHz to 690 MHz at reverse biases from 15 V to 30 V.

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Section: Frequency and Transient Responsementioning

confidence: 98%

Ultra-Low Capacitance Spot PIN Photodiodes

2023

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“…In addition, this very high value occults the dark current increase due to the surface recombination variation. In order to reduce the dark current to a reasonable value, the electron minority lifetime is increased as done in [18]. Indeed, the diffusion dark current decreases with the increase of the minority carrier lifetime as shown in [19], [20].…”

Section: B Simulation Of the Diffusion Dark Currentmentioning

confidence: 99%

Exploration of Pinned Photodiode Radiation Hardening Solutions Through TCAD Simulations

Marcelot

Goiffon

Magnan

2019

IEEE Trans. Electron Devices

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The use of pinned photodiode (PPD) based CMOS image sensors in harsh radiation environment (such as space) is limited by their tolerance to ionizing radiation. Technology computer aided design (TCAD) simulations are performed to reproduce the radiation induced defect and therefore the dark current increase in pinned photodiode pixels up to 1 kGy (i.e. 100 krad) of total ionizing dose (TID). To do so, the TCAD models are calibrated with measurements performed on irradiated pixels. Then, the influence on the PPD radiation hardness of various manufacturing process and pixel design modifications is explored. This works shows that the proposed modification can improve the radiation hardness of pinned photodiode CMOS image sensors against ionizing.

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