Impact of thermal annealing on interfacial layer and electrical properties of a-SiN
                    <sub>x</sub>
                    : H/Si

Singh, Surya Prakash; Prakash, G. Vijaya; Ghosh, Saswath; Rai, Sanjay; Srivastava, Pankaj

doi:10.1209/0295-5075/90/26002

Cited by 6 publications

(1 citation statement)

References 41 publications

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“…As evident both the density and roughness increase with increasing SiN x layer thickness. The lower density of the deposited SiN x films (see Table 1) than that of the bulk Si 3 N 4 density (3.1g/cm 3 ) is due to hydrogenated incorporated void structure (7). The incorporation of hydrogen is attributed to the usage of SiH 4 and NH 3 .…”

Section: Effect Of Sin X Layer Thickness On the 2deg Carrier Densitymentioning

confidence: 92%

Silicon Nitride Thickness Dependent Electrical Properties of InAlN/GaN Heterostructures

et al. 2014

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We have investigated the effects of silicon nitride layer thickness on the passivation of InAlN/GaN-on-Si high electron mobility transistors (HEMTs). It is found that the charge density in the two dimensional electron gas (2DEG) at the InAlN/GaN interface increases with increasing SiN x passivation layer thickness and saturates at an optimal thickness of ~ 100 nm. A systematic red shift in the photoluminescence (PL) peak position of the GaN channel is observed due to the enhancement in 2DEG carrier density related to SiN x layer thickness. Such passivated InAlN/GaN-on-Si HEMTs show increase in the saturation drain current, maximum extrinsic transconductance and negative threshold voltage shifts. A maximum increase of the drain current from 0.64 to 0.92 A/mm, and the peak extrinsic transconductance from 0.165 to 0.206 S/mm are observed for a SiN x thickness of 100 nm and higherWe have investigated the effects of silicon nitride layer thickness on the passivation of InAlN/GaN-on-Si high electron mobility transistors (HEMTs). It is found that the charge density in the two dimensional electron gas (2DEG) at the InAlN/GaN interface increases with increasing SiN x passivation layer thickness and saturates at an optimal thickness of ~ 100 nm. A systematic red shift in the photoluminescence (PL) peak position of the GaN channel is observed due to the enhancement in 2DEG carrier density related to SiN x layer thickness. Such passivated InAlN/GaN-on-Si HEMTs show increase in the saturation drain current, maximum extrinsic transconductance and negative threshold voltage shifts. A maximum increase of the drain current from 0.64 to 0.92 A/mm, and the peak extrinsic transconductance from 0.165 to 0.206 S/mm are observed for a SiN x thickness of 100 nm and higher

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Section: Effect Of Sin X Layer Thickness On the 2deg Carrier Densitymentioning

confidence: 92%

Silicon Nitride Thickness Dependent Electrical Properties of InAlN/GaN Heterostructures

et al. 2014

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Light-triggered defect dynamics in silicon wafers: understanding degradation mechanisms

Chibane,

Kouhlane,

Bouhafs

et al. 2024

Appl. Phys. A

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Oxidation studies of niobium thin films at room temperature by X-ray reflectivity

Sokhey

Rai

Lodha

2010

Applied Surface Science

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Impact of thermal annealing on interfacial layer and electrical properties of a-SiN _x : H/Si

Cited by 6 publications

References 41 publications

Silicon Nitride Thickness Dependent Electrical Properties of InAlN/GaN Heterostructures

Silicon Nitride Thickness Dependent Electrical Properties of InAlN/GaN Heterostructures

Light-triggered defect dynamics in silicon wafers: understanding degradation mechanisms

Oxidation studies of niobium thin films at room temperature by X-ray reflectivity

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Impact of thermal annealing on interfacial layer and electrical properties of a-SiN x : H/Si

Cited by 6 publications

References 41 publications

Silicon Nitride Thickness Dependent Electrical Properties of InAlN/GaN Heterostructures

Silicon Nitride Thickness Dependent Electrical Properties of InAlN/GaN Heterostructures

Light-triggered defect dynamics in silicon wafers: understanding degradation mechanisms

Oxidation studies of niobium thin films at room temperature by X-ray reflectivity

Contact Info

Product

Resources

About

Impact of thermal annealing on interfacial layer and electrical properties of a-SiN _x : H/Si