Impact of Ti doping in Sm2O3 dielectric on electrical characteristics of a-InGaZnO thin-film transistors

Abstract

We investigated the impact of Ti doping in the Sm2O3 dielectric on the electrical stress-induced instability in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). With increasing stress time in a-IGZO TFT devices, a small initial positive shift followed by a negative shift of threshold voltage is characterized in the Sm2O3 dielectric, whereas only positive shift of threshold voltage is observed for Ti-doped Sm2O3 dielectric. The positive shift of the threshold voltage can be explained by charge trapping in the Sm2O3 film and/or the Sm2O3/IGZO interfaces, while the negative shift of threshold voltage is probably due to the extra charges from the IGZO channel by self-heating effect.

Synthesis, Characterization and Photocatalytic Study of Sm3+ Doped Mesoporous CeO2 Nanoparticles

“…The XPS of Sm(III) is represented in Figure 4C. The characteristic 3d peaks of Sm(III) appear at 1111.08 (3d 3/2 ) and 1083.6 eV (3d 5/2 ) which is in agreement with the reported values [32].…”

Crystal structure and X-ray photoemission spectroscopic study of A2LaMO6 [A=Ba, Ca; M=Nb, Ta]

“…6 that the spectra are de-convoluted into three peaks for BLN and four peaks for CLN and CLT. The highest energy peak for all the spectra is originated from the hygroscopicity of lanthanum which is the common feature of lanthanide oxide materials [24,25]. The crystal structure (mainly the different oxygen positions) is responsible for other two peaks for BLN and three peaks for CLT and CLN.…”

Structural and electrical characteristics of high-κ Sm2TiO5gate dielectrics for InGaZnO thin-film transistors

“…In addition, we demonstrated that thin Sm 2 TiO 5 film as gate dielectric materials showed a high capacitance value, a low hysteresis voltage, a small frequency dispersion, and a low leakage current [23]. Although the impact of Ti doping in the Sm 2 O 3 on electrical characteristics of IGZO TFTs was studied in our previous report [24], the physical and electrical properties of the Sm 2 TiO 5 film as a gate dielectric for -IGZO TFT devices are still not known. In this study, we investigated the effect of thermal annealing on the structural properties and electrical characteristics of Sm 2 TiO 5 dielectrics for -IGZO TFT device applications.…”