Structural and electrical characteristics of high-κ Sm₂TiO₅gate dielectrics for InGaZnO thin-film transistors

Abstract

In this study, we developed an amorphous indium-gallium-zinc oxide (-IGZO) thinfilm transistor (TFT) incorporating high- Sm 2 TiO 5 gate dielectrics. The high- Sm 2 TiO 5 -IGZO TFT after annealing at 400°C exhibited very good electrical characteristics, such as a high I on/off ratio of 5.27×10 7 , a high field-effect mobility of 27.8 cm 2 /V-sec, a low threshold voltage of 0.2 V, and a low subthreshold swing of 136 mV/decade. These results are probably due to the incorporation of Ti into the Sm 2 O 3 film, resulting in the formation of good Sm 2 TiO 5 gate dielectric and low density of interface states at the oxide/channel interface.Index Terms -amorphous indium-gallium-zinc oxide (α-IGZO), gate dielectric, Sm 2 TiO 5 , thin-film transistor (TFT).

A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered ZrxSi1−xO2Gate dielectric and improved electrical and hysteresis performance

“…[29][30][31] Several studies have reported that IGZO TFTs with a ZrO 2 gate dielectric might have good performance. 32,33) In addition, it has been reported that the suitable incorporation of SiO 2 with high-κ materials could modulate the dielectric constant, reduce the density of bulk defects, smooth the film surface, and improve the trap density of channel=dielectric interfaces. [34][35][36][37] In this work, to improve the quality of the ZrO 2 gate dielectric, Zr x Si 1−x O 2 films obtained from the room-temperature co-sputtering of ZrO 2 and SiO 2 targets are proposed for the gate dielectric of IGZO TFTs.…”