Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise Amplifiers

Axelsson, Olle; Billström, Niklas; Rorsman, Niklas; Thorsell, Mattias

doi:10.1109/lmwc.2015.2505641

Cited by 26 publications

(10 citation statements)

References 8 publications

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“…Buffer layer is intentionally Fe‐doped, as Fe‐doping decreases deep‐acceptor traps and buffer leakages compared to C‐doping. An undoped buffer layer would be a better solution to have low trap densities 33 ; however, the buffer is intentionally doped since it is needed to be highly resistive. A heterostructure is formed by an AlGaN layer of 20 nm to 25 nm thickness on top of the channel GaN layer to create the mismatch to utilize piezoelectric polarization, which forms two‐dimensional electron gas (2DEG) consisting of free electrons with high mobility.…”

Section: Device and Mmic Fabricationmentioning

confidence: 99%

“…Liero et al 22 reported the recovery time for LNA as low as 30 ns with a gain compression of around 8 dB. As explained by Meneghini et al, 32 buffer traps are introduced in Fe-doped AlGaN/GaN HEMTs, and their effect on the recovery time is explored by Axelsson et al 33 They have shown an improvement in RRT in the order of 3 for LNA with undoped GaN buffer compared to LNAs with Fe-doped buffer. The proposed LNA in this work exhibits an RRT value of 20 ms for 34 dB gain compression and less than 27 ns for gain compression less than 12 dB.…”

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confidence: 99%

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Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications

Zafar

Akoglu

Aras

et al. 2022

Circuit Theory & Apps

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In this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN on a SiC HEMT process. Owing to the optimum choice of HEMT topologies and simultaneous matching technique, LNA achieves a noise figure better than 2 dB, output power at 1 dB gain compression higher than 19 dB, input and output reflection coefficients better than À9 and À11 dB, respectively. The small-signal gain of LNA is more than 19 dB for the whole band, and NF has a minimum of 1.74 dB at 10.2 GHz. LNA obtains an OIP3 up to 34.2 dBm and survives input power as high as 42 dBm. Survivability is investigated in terms of gain compression and forward gate current. Reverse recovery time (RRT), a crucial parameter for radar front-ends, is explored with respect to the RC time constant and trap phenomenon. The analysis shows that the significant contribution in RRT is due to traps while the RC time constant is in the nanoseconds range. Moreover, this study also addresses the requirement and choice of a DC gate feed resistor for the subsequent stages in a multi-stage design. The size of the designed LNA chip is 3 mm Â 1.2 mm only.

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Section: Device and Mmic Fabricationmentioning

confidence: 99%

mentioning

confidence: 99%

Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications

Zafar

Akoglu

Aras

et al. 2022

Circuit Theory & Apps

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show abstract

“…[50] In addition, the recovery time of the low noise amplifiers is longer for the transistors with Fe-doped buffer than those with unintentionally doped buffer, as a result of the trapping effect of Fe impurities. [51] Furthermore, the Fe impurities in the substrate could easily diffuse into the channel region of the device and have a great influence on the device performance. [52] The unintentionally incorporated impurities are harmful to the performance of GaN-based devices.…”

Section: Progress Of Highly Pure Ganmentioning

confidence: 99%

“…Moreover, semi-insulating GaN is generally obtained by the compensation of background shallow donors (mainly Si and O impurities) by deep level impurities (mainly Fe and C impurities), but heavy doping leads to tremendous disasters in devices. [50][51][52] Learning from the experiences in HPSI GaAs [53] and SiC, [54] HPSI GaN points out a new way to solve the problems above. If we could reduce the concentration of the background shallow donors, the concentration of deep level impurities needed to realize semi-insulating electrical characteristic could decrease correspondingly.…”

Section: Introductionmentioning

confidence: 99%

Growth and doping of bulk GaN by hydride vapor phase epitaxy*

Wang

Cai²,

Ren

et al. 2020

Chinese Phys. B

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Doping is essential in the growth of bulk GaN substrates, which could help control the electrical properties to meet the requirements of various types of GaN-based devices. The progresses in the growth of undoped, Si-doped, Ge-doped, Fe-doped, and highly pure GaN by hydride vapor phase epitaxy (HVPE) are reviewed in this article. The growth technology and precursors of each type of doping are introduced. Besides, the influence of doping on the optical and electrical properties of GaN are presented in detail. Furthermore, the problems caused by doping, as well as the methods to solve them are also discussed. At last, highly pure GaN is briefly introduced, which points out a new way to realize high-purity semi-insulating (HPSI) GaN.

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“…With these measures the survivability of the GaN LNA is very high, but after a high-input overdrive pulse the LNA is changing its performance. The recovery time due to trapping effects can be very long [11]. With a special biasing electronic circuitry (patent-pending) it is possible to reduce the trapping itself and the recovery time to a sufferable level.…”

Section: Designmentioning

confidence: 99%

GaN-based single-chip frontend for next-generation X-band AESA systems

Schuh

Sledzik

Reber

2018

Int. J. Microw. Wireless Technol.

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A next generation of active electronically scanned array (AESA) antennas will be challenged with the need for lower size, weight, power, and cost. This leads to enhanced demands especially with regard to the integration density of the radio frequency-part inside aT/Rmodule. The semiconductor material GaN has proven its capacity for high-power amplifiers (HPA), robust receive components as well as switch components for separation of transmit and receive mode. This paper will describe the design and measurement results of a GaN-based single-chipT/Rmodule frontend (HPA, low noise anplifier, and single-pole double-throw (SPDT)) using UMS GH25 technology and covering the frequency range from 8 GHz to 12 GHz. The key performance parameters of the frontend are 13 W minimum transmit (TX) output power over the whole frequency range with peak power up to 17 W. The frontend in receive (RX) mode has a noise figure below 3.2 dB over the whole frequency range, and can survive more than 5 W input power. The large signal insertion loss of the used SPDT is below 0.9 dB at 43 dBm input power level.

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Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise Amplifiers

Cited by 26 publications

References 8 publications

Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications

Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications

Growth and doping of bulk GaN by hydride vapor phase epitaxy*

GaN-based single-chip frontend for next-generation X-band AESA systems

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