Impactful Study of F-shaped Tunnel FET

Abstract

In this proposed work, a novel single gate F-shaped channel tunnel field effect transistor (SG-FC-TFET) is proposed and investigated. The impact of thickness of the source region and lateral tunneling length between the gate oxide and edge of the source region on analog and radio frequency parameters are investigated with appropriate source and drain lateral length through the 2D-TCAD tool. The slender shape of the source enhanced the electric file crowding effect at the corners of the source region which reflect in term of high On-current (I on ). The I on of proposed device is increased up to 10 −4 A/µm with reduced sub-threshold swing (SS) is 7.3 mV/decade and minimum turn-ON voltage (V on = 0.28 V). The analog/RF parameters of SG-FC-TFET are optimized. Keywords Band-to-Band tunneling (B2BT) • Tunnel Field Effect Transistor (TFET) • Energy band diagram (EBD) • source/channel interface (SCi) • Drain/channel interface (DCi) • Tunneling length • F-shaped channel

Assessment of temperature and ITCs on single gate L-shaped tunnel FET for low power high frequency application

“…To examine the SG-nLTFET efficiency and the trade-off between power consumption and operating bandwidth, TGF and TFP are examined under the application of ITCs, and Temp K [30,31]. Figures 6(c) and (d) show the TGF and TFP data plots with the different polarity of ITCs and Temp K value, respectively.…”