Impacts of diamond heat spreader on the thermo-mechanical characteristics of high-power AlGaN/GaN HEMTs

Zhang, R.; Zhao, Wen‐Sheng; Wang, Yin; Zhao, Zheng Guo; Zhou, Hongwei

doi:10.1016/j.diamond.2014.12.001

Cited by 27 publications

(12 citation statements)

References 29 publications

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“…However, any high power application needs an efficient thermal management to suppress the self-heating of the HEMT active channel which limits their performance [4,5]. The heat dissipation from the active region can be improved by using a proper substrate, such as silicon carbide (SiC) or diamond with thermal conductivities 3.5 and 18 W/ cmK, respectively [6,7]. On the other hand, single-crystalline diamond wafers are in limited size (few mm 2 ) and high price, therefore, polycrystalline chemical vapour deposited (CVD) diamond films grown on the top of the devices become more attractive solution [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

et al. 2016

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Section: Introductionmentioning

confidence: 99%

Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

et al. 2016

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“…[9][10] In terms of power electronic and radio frequency (RF) devices, CVD diamond has been proposed to integrate with GaN-based high-electron-mobility transistors (HEMTs) as both a heat spreading layer and a device substrate. 2,[11][12][13][14] The goal is to significantly improve the heat dissipation of the devices and to decrease the operational temperature. It has been shown that limiting device operational temperature can significantly increase the reliability and lifetime of the device.…”

Section: Introductionmentioning

confidence: 99%

Simultaneous Evaluation of Heat Capacity and In-plane Thermal Conductivity of Nanocrystalline Diamond Thin Films

Yates

Cheng

Bai

et al. 2021

Nanoscale and Microscale Thermophysical Engineering

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As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as an effective solution for thermal management of these devices by directly growing onto the transistor substrate. A key aspect of power and radio frequency (RF) electronic devices involves transient switching behavior, which highlights the importance of understanding the temperature dependence of a material's heat capacity and thermal conductivity when modeling and predicting device electro-thermal response. Due to the complicated microstructure near the interface between CVD diamond and electronics, it is difficult to measure both properties simultaneously.In this work, we use time-domain thermoreflectance (TDTR) to simultaneously measure the in-plane thermal conductivity and heat capacity of a 1-µm -thick CVD diamond film, and also use the pump as an effective heater to perform temperature dependent measurements. The results show that the in-plane thermal conductivity varied slightly with an average of 103 W/m-K over a temperature range of 302-327 K, while the specific heat capacity has a strong temperature dependence over the same range and matches with heat capacity data of natural diamond in literature.

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“…Consisted of C sp3 bonds [1] , diamond possesses plenty of outstanding performances, like high hardness [2] , thermal conductivity [3] and structural stability [4] , thus can be applied in a variety of fields, such as tools [5] , heat sink [6] , sensors [7,8] and optoelectronic devices [9,10] for high-tech industry. Taking structural integrity into consideration, epitaxial films and even single crystal diamonds (SCD) are in great need [11] , owing to the lack of grain boundaries and less impurities [12] .…”

Section: Introductionmentioning

confidence: 99%

The Transformation from (111) to (100): A Routine to Large-Scale Epitaxial Diamond

Wang¹,

Wang²,

Yang³

et al. 2020

Preprint

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Diamond is a material with excellent performances which attracts the attention from researchers for decades. Pt (111), owing to its catalytic activity on diamond synthesis, is regarded to be a candidate for diamond hetero-epitaxity, which can enhance nucleation density. Molten surface at diamond growth temperature can also improve mobility and aggregation capability of primitive nuclei. Generally, (100)-oriented is welcomed for the achivement of high quality and large size diamond, since the formation of defects and twins are prevented. First-principle calculations and experimental researches were carried out for the study of transformation of orientation. The transformation from {111} to {100}-oriented diamond has been observed on Pt (111) substrate, which can be promoted by the increase of carbon source concentration and substrate temperature. The process is energetic favorable, which may provides a way towards large-scale (100) diamond films.

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Impacts of diamond heat spreader on the thermo-mechanical characteristics of high-power AlGaN/GaN HEMTs

Cited by 27 publications

References 29 publications

Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

Simultaneous Evaluation of Heat Capacity and In-plane Thermal Conductivity of Nanocrystalline Diamond Thin Films

The Transformation from (111) to (100): A Routine to Large-Scale Epitaxial Diamond

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