Impedance spectroscopy analysis of the switching mechanism of reduced graphene oxide resistive switching memory

Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide–Titanium Oxide Memories

“…We chose Pt as the bottom electrode because, in addition to its nonreactive nature and excellent electrical properties, it has been reported that GO films on Pt show very low surface roughness . Indeed, the average root-mean-square (rms) roughness of our GO films deposited onto Pt was very low when compared to GO films reported to date, ,,,,,, the film in Figure c having an rms roughness of only 1.3 nm, along with excellent uniformity.…”

“…Among these RRAM materials, graphene oxide (GO) is generating considerable scientific and commercial interest due to its potential for low cost fabrication, environmentally sustainable manufacturability and, perhaps most importantly, its high mechanical flexibility and high optical transparency, all of which make it well-suited to future flexible and transparent electronics applications. ,− However, it is not an overstatement to say that previous studies of GO memory devices have reported a range of often conflicting findings. For example, bipolar resistive switching was observed by some authors in an Au/GO/Pt structure, but not by others. , Likewise, in some studies an Al/GO/Al stack showed excellent memory characteristics on both flexible and rigid substrates; , while in other studies no switching was observed for the same structure. , Discrepancies were also reported for other electrode combinations such as, Ag/GO/ITO, , Al/GO/Pt, , Cu/GO/Pt, , Au/GO/ITO, , Al/GO/ITO. , …”

“…31,32 Likewise, in some studies an Al/GO/Al stack showed excellent memory characteristics on both flexible and rigid substrates; 24,33 while in other studies no switching was observed for the same structure. 32,34 Discrepancies were also reported for other electrode combinations such as, Ag/GO/ITO, 35,36 Al/GO/ Pt, 31,32 Cu/GO/Pt, 30,37 Au/GO/ITO, 32,38 Al/GO/ITO. 31,39 Unsurprisingly, in light of the varying switching characteristics observed in GO-based memories, a wide range of possible switching mechanisms have been put forward.…”

Memristive behavior in In2Se3 asymmetrical hetero-structures

“…10,11 Memristive behavior have been shown in various materials such as transition metal oxides, 2,11-17 perovskite oxides, 18,19 chalcogenides, [20][21][22][23] organics, 24,25 ferroelectric materials 18,[26][27][28] and even in graphenebased structures. [29][30][31] The possible resistive switching (RS) mechanisms in memristive devices have been extensively studied, mainly including ionic migration, pure electronic effects, 32 and even thermal effects. Completely understanding the underlying mechanism is the key for further controlling the RS accurately and efficaciously.…”

Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing

“…On the other hand, UV− ozone treatment needs additional equipment, which may not be present in all facilities. In some papers ITO is deposited on glass or SiO 2 substrates, UV−ozone treatment 62,72 or UV light irradiation is used for better adhesion of GO to the bottom electrode. 53 Another method employed for the fabrication of GO-based RRAMs is vacuum filtration.…”