Memristive behavior in In<sub>2</sub>Se<sub>3</sub> asymmetrical hetero-structures

Yuan, Yafei; Cao, Xinran; Sun, Yan; Su, Jing; Liu, Chunmin; Cheng, Ling; Yuan, Lihua; Zhang, Hao; Li, Jing

doi:10.1039/c7ra08438b

Cited by 15 publications

(10 citation statements)

References 34 publications

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“…Chalcogenide glass have recently attracted a lot of attention duo to its unique physical, electrical and optical properties [1][2][3][4][5][6] , Which is including the relatively wide transparency window 7 , the photo-induced phenomena 8 , the low-energy phonons 9 and the high nonlinear refractive indices 10 . these properties make chalcogenide application in the next generation optoelectronic devices [11][12][13][14][15] .…”

Section: Introductionmentioning

confidence: 99%

TEMPERATURE-DEPENDENT STRUCTURE AND OPTICAL PROPERTIES OF In2Se3 THIN FILMS

YUAN¹,

LI²,

WANG³

et al. 2020

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Chalcogenide-based In2Se3 thin films were deposited by RF magnetron sputtering method at room temperature, and then were annealed at different temperature under nitrogen atmosphere in order to study the effect of annealing temperature on structure and optical. X-ray diffraction analysis show that, the preferred orientation in (110), (006), and (207) plane were observed in XRD result of the film sample annealed at 400℃. The Raman spectrometer result reveals that the main Raman peaks were identified as the γ-phase In2Se3 structure and the peak in the film annealed at 400℃ moves to small direction indicates the inner structure changes occurrence. A Spectroscopic Ellipsometer was employed to measure the optical constants including refractive index and the extinction coefficient of the films. The optical bandgap decreased from 3.41 eV to 2.45 eV with the annealed temperature increasing. The variation is attributed to the Burstein-Moss effect.

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Section: Introductionmentioning

confidence: 99%

TEMPERATURE-DEPENDENT STRUCTURE AND OPTICAL PROPERTIES OF In2Se3 THIN FILMS

YUAN¹,

LI²,

WANG³

et al. 2020

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“…Chalcogenide glass has attracted considerable interest because of its interesting electrical and optical properties, − that is, relatively wide transparency window, low-energy phonons, photo-induced phenomena, and high linear and nonlinear refractive indices . All of these properties make chalcogenide glass a promising candidate material in the next generation of photonic chip platform for ultrafast all-optical signal processing. − However, the poor thermal stability limits chalcogenide in real applications.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of Ti-Doped InTe Thin Films

Yuan

Liu

et al. 2018

J. Phys. Chem. C

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Thin films of Ti-doped indium telluride (InTe) chalcogenide were prepared by the magnetron co-sputtering method. The optical and structural properties were investigated by various tools after the thermal treatment. All annealed films were highly polycrystalline with (211) as the preferred orientation. Raman spectra results confirm that the structure of the InTe films can be adjusted by Ti dopants. The transmittance is high in the near-infrared region. The refractive index (n) and extinction coefficient (k) of the films were measured by a Spectroscopic Ellipsometer. The optical band gaps increase from 1.56 to 1.85 eV with the increasing concentration of Ti. The third-order nonlinear optical properties of the thin films were investigated by applying the open-aperture Z-scan method with femtosecond laser excitation at 800 nm wavelength. The results show reverse saturation absorptions which show the potential value of the films in optical limiting applications. The nonlinear absorption coefficient was calculated using a model developed by Sheik-Behae. The femtosecond pump–probe technique was employed to measure the transient reflectivity of the samples. The results indicate that the lifetime of the carrier can be adjusted by the Ti dopant because of the carrier trapping effect.

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“…A few reports have realized FeFETs using ferroelectric 2D materials as the channel layer and the resistance states of the devices were controlled by ferroelectric polarization switching. [90,91] In a recent study, planar as well as vertical memristors using α-In2Se3 were investigated, demonstrating memristive phenomena based on both in-plane and out-of-plane polarization. [92] Both the devices exhibited a resistive switching ratio >10 3 due to modulation of the Schottky barrier height with ferroelectric gate bias and showed excellent endurance and retention properties for over 100 cycles and up to 1000 s, respectively.…”

Section: B Ferroelectric Memristorsmentioning

confidence: 99%

Opportunities in electrically tunable 2D materials beyond graphene: Recent progress and future outlook

Vincent

Liang

Singh

et al. 2021

Applied Physics Reviews

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The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic properties as well as the emergence of many different quasiparticles, including plasmons, polaritons, trions and excitons with large, tunable binding energies that all can be controlled and modulated through electrical means has given rise to many device applications. In addition, these materials exhibit both room-temperature spin and valley polarization, magnetism, superconductivity, piezoelectricity that are intricately dependent on the composition, crystal structure, stacking, twist angle, layer number and phases of these materials. Initial results on graphene exfoliated from single bulk crystals motivated the development of wide-area, high purity synthesis and heterojunctions with atomically clean interfaces. Now by opening this design space to new synthetic two-dimensional materials "beyond graphene", it is possible to explore uncharted opportunities in designing novel heterostructures for electrical tunable devices. To fully reveal the emerging functionalities and opportunities of these atomically thin materials in practical applications, this review highlights several representative and noteworthy research directions in the use of electrical means to tune these aforementioned physical and structural properties, with an emphasis on discussing major applications of beyond graphene 2D materials in tunable devices in the past few years and an outlook of what is to come in the next decade.

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Memristive behavior in In₂Se₃ asymmetrical hetero-structures

Abstract: Based on Ag/In2Se3/ITO and Ta/In2Se3/ITO asymmetrical heterostructures, several memristive samples were prepared by the magnetron sputtering method.

Cited by 15 publications

References 34 publications

TEMPERATURE-DEPENDENT STRUCTURE AND OPTICAL PROPERTIES OF In2Se3 THIN FILMS

TEMPERATURE-DEPENDENT STRUCTURE AND OPTICAL PROPERTIES OF In2Se3 THIN FILMS

Structural and Optical Properties of Ti-Doped InTe Thin Films

Opportunities in electrically tunable 2D materials beyond graphene: Recent progress and future outlook

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Memristive behavior in In2Se3 asymmetrical hetero-structures

Abstract: Based on Ag/In2Se3/ITO and Ta/In2Se3/ITO asymmetrical heterostructures, several memristive samples were prepared by the magnetron sputtering method.

Cited by 15 publications

References 34 publications

TEMPERATURE-DEPENDENT STRUCTURE AND OPTICAL PROPERTIES OF In2Se3 THIN FILMS

TEMPERATURE-DEPENDENT STRUCTURE AND OPTICAL PROPERTIES OF In2Se3 THIN FILMS

Structural and Optical Properties of Ti-Doped InTe Thin Films

Opportunities in electrically tunable 2D materials beyond graphene: Recent progress and future outlook

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Memristive behavior in In₂Se₃ asymmetrical hetero-structures