2008 IEEE International Symposium on Circuits and Systems (ISCAS) 2008
DOI: 10.1109/iscas.2008.4541427
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Implant electronics for intraocular epiretinal neuro-stimulators

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Cited by 10 publications
(3 citation statements)
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“…7. This feature is very useful where signal timing across voltage domains is important, for example in neurostimulators where charge balance between sourcing (from ) and sinking (to ) current is required [14]. The area penalty of the inverters and latch is less than 5% since the area is dominated by the DMOS transistors.…”
Section: B Improvement II -Latchingmentioning
confidence: 99%
“…7. This feature is very useful where signal timing across voltage domains is important, for example in neurostimulators where charge balance between sourcing (from ) and sinking (to ) current is required [14]. The area penalty of the inverters and latch is less than 5% since the area is dominated by the DMOS transistors.…”
Section: B Improvement II -Latchingmentioning
confidence: 99%
“…(1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15) The stimulating electrodes of a subretinal implant are positioned under photoreceptors whereas those of an epiretinal implant are positioned above ganglion cells. In the subretinal implants, (8)(9)(10)(11)(12)(13)(14)(15) passive photodiode array, (9) active photodiode sensors with current amplifiers, (8,11,12) or active pixel circuits, (10,13) have been proposed.…”
Section: Introductionmentioning
confidence: 99%
“…Related studies include low power CMOS chip designs to drive the electrode matrix, FPGA-based stimulation systems, dense and flexible microelectrode matrix development, low current stimulation technologies, wireless power and data transfer technologies, and micro magnetic stimulation technologies [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%