Implementation of three-phase four-leg inverter using SiC MOSFET for UPS applications

Jegal, Jun-Hyeok; Kwon, Minho; Oh, Chulhong; Kim, Kiryong; Lee, Jong‑Pil

doi:10.1007/s43236-020-00173-w

Cited by 8 publications

(2 citation statements)

References 11 publications

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“…The power electronics is indispensable for reducing carbon dioxide emissions and is currently applied in a wide range of fields such as home appliances, transportation [1], [2], and industrial applications [3]. Recently, power conditioners based on power converter circuits have been used in photovoltaic [4] and wind power generation [5].…”

Section: Introductionmentioning

confidence: 99%

Gate Drive Circuit Implementation for Parallel Connection of Power Devices Considering Parasitic Inductance

Funaki

Wãda

2023

IEEJ Journal IA

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SiC devices are potential future power devices because of their higher switching speed and lower ON resistance than those of Si devices. Research and development efforts to apply them in medium-and largecapacity power conversion circuits are underway. However, SiC power devices in TO packages, which are general-purpose packages, are difficult to apply in high-current applications owing to their low current ratings. Therefore, increasing the capacity of power devices by connecting them in parallel is being studied. However, the current imbalance during switching due to the differences in device characteristics and variations in parasitic inductance is problem. This study proposed a current-balancing procedure focused on the parasitic inductances around power devices and gate drive circuit implementation. The proposed method was verified by conducting double-pulse tests at 300 V and 200 A.

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Section: Introductionmentioning

confidence: 99%

Gate Drive Circuit Implementation for Parallel Connection of Power Devices Considering Parasitic Inductance

Funaki

Wãda

2023

IEEJ Journal IA

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“…As the third-generation, wide-band gap semiconductor, silicon carbide (SiC) has the advantages of the wide-band gap, high thermal conductivity, high mechanical strength, strong radiation resistance, and so on. It has been widely used to prepare sensors and power electronic devices working in extreme environments such as high temperature, high frequency, and high pressure [ 9 , 10 , 11 ]. What is noteworthy is that hexagonal SiC as bulk SiC, such as 6H- and 4H-, is considered the most promising semiconductor materials for the preparation of all SiC sensors working in high-temperature environment semiconductors [ 12 , 13 ].…”

Section: Introductionmentioning

confidence: 99%

Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Liang

Cheng

et al. 2021

Micromachines

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In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additionally, the excellent ohmic contact was formed by annealing at 950 °C between Ni/Al/Ni/Au and p-type SiC with a doping concentration of 1018cm−3. The aging sensor was tested for varistors in the air of 25 °C–600 °C. The resistance value of the varistors initially decreased and then increased with the increase of temperature and reached the minimum at ~450 °C. It could be calculated that the varistors at ~100 °C exhibited the maximum temperature coefficient of resistance (TCR) of ~−0.35%/°C. The above results indicated that the sensor had a stable electrical connection in the air environment of ≤600 °C. Finally, the encapsulated sensor was subjected to pressure/depressure tests at room temperature. The test results revealed that the sensor output sensitivity was approximately 1.09 mV/V/bar, which is better than other SiC pressure sensors. This study has a great significance for the test of mechanical parameters under the extreme environment of 600 °C.

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Design and implementation of 1000 V 20 kW power module for electric vehicle fast charger

Lee,

Park,

Cho

et al. 2023

J. Power Electron.

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Implementation of three-phase four-leg inverter using SiC MOSFET for UPS applications

Cited by 8 publications

References 11 publications

Gate Drive Circuit Implementation for Parallel Connection of Power Devices Considering Parasitic Inductance

Gate Drive Circuit Implementation for Parallel Connection of Power Devices Considering Parasitic Inductance

Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Design and implementation of 1000 V 20 kW power module for electric vehicle fast charger

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