2021
DOI: 10.1103/physrevresearch.3.043219
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Importance of surface oxygen vacancies for ultrafast hot carrier relaxation and transport in Cu2 O

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Cited by 13 publications
(10 citation statements)
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“… 33 , 34 , 36 , 37 The underlying decay channels were assigned by density functional theory (DFT) to in-gap resonances at 1.6 and 1.5 eV above the VB top, introduced by V O2+ and V O+ defects, respectively. 38 While V O2+ centers preferentially develop in highly p-type oxides with the VB top pinned to E F , as in our case, any downshift of the VB promotes the formation of single-charged V O+ defects. Our detected STM luminescence deviates markedly from this V O emission response, as it covers a much wider wavelength range from 700 to 950 nm and depends sensitively on the actual tip state.…”
supporting
confidence: 60%
See 1 more Smart Citation
“… 33 , 34 , 36 , 37 The underlying decay channels were assigned by density functional theory (DFT) to in-gap resonances at 1.6 and 1.5 eV above the VB top, introduced by V O2+ and V O+ defects, respectively. 38 While V O2+ centers preferentially develop in highly p-type oxides with the VB top pinned to E F , as in our case, any downshift of the VB promotes the formation of single-charged V O+ defects. Our detected STM luminescence deviates markedly from this V O emission response, as it covers a much wider wavelength range from 700 to 950 nm and depends sensitively on the actual tip state.…”
supporting
confidence: 60%
“…The PL signature of V O2+ and V O+ complexes in Cu 2 O are peaks at 750 and 850 nm, broadened to 80–100 nm FWHM due to finite sample crystallinity. ,,, The underlying decay channels were assigned by density functional theory (DFT) to in-gap resonances at 1.6 and 1.5 eV above the VB top, introduced by V O2+ and V O+ defects, respectively . While V O2+ centers preferentially develop in highly p-type oxides with the VB top pinned to E F , as in our case, any downshift of the VB promotes the formation of single-charged V O+ defects.…”
mentioning
confidence: 53%
“…Prior to CO 2 adsorption, the two excess electrons at the oxygen vacancy occupy states which are resonant with the valence band of Cu 2 O and create an empty localized defect state about 1.6 eV above the valence band maximum. 28 Upon adsorption, the CO 2 accepts one of the two excess electrons from the oxygen vacancy as a result of the hybridization between CO 2 and the Cu 2 O surfaces, as evidenced by the broadened orbitals in Figure 4. This excess electron is transferred to the lowest unoccupied molecular orbital (LUMO) of CO 2 , destabilizing the C−O bond.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The corresponding excited-state reaction energy profiles are then investigated, as shown in Figures C, C, and C. Prior to CO 2 adsorption, the two excess electrons at the oxygen vacancy occupy states which are resonant with the valence band of Cu 2 O and create an empty localized defect state about 1.6 eV above the valence band maximum . Upon adsorption, the CO 2 accepts one of the two excess electrons from the oxygen vacancy as a result of the hybridization between CO 2 and the Cu 2 O surfaces, as evidenced by the broadened orbitals in Figure .…”
Section: Resultsmentioning
confidence: 99%
“…All calculations were performed using the DFT periodic Vienna ab initio Simulation Package (VASP) [33]. Since conventional DFT functionals cannot provide a good description of the strong correlation effect between partially filled 3d Cu states in CuO [34], DFT +U calculations were performed using the Perdew-Burke-Ernzerhof (PBE) density functional and the Projected Augmented Wave method (PAW) while the plane wave cutoff energy was set at 500 eV [35].…”
Section: Computational Detailsmentioning
confidence: 99%