Improved Cauer thermal network considering thermal coupling effects of multi‐chip modules

Yuan, Wu; He, Yigang; Li, Bing; Zhou, Jianbo; Ma, Zhiqiang; Li, Chenchen

doi:10.1049/iet-pel.2020.0001

Cited by 5 publications

(2 citation statements)

References 37 publications

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“…When I test = 10 A, where T ave is about 70 °C, the estimation error is about 5.0 °C, even when the thermal crosscoupling is ignored. In the existing studies, [19][20][21][22][23][24][25][26][27][28] the effect of the thermal cross-coupling may not be significant. In the environments where die temperature becomes higher, the errors of these studies would have been larger.…”

Section: Resultsmentioning

confidence: 99%

“…Other studies for siliconbased insulated gate bipolar transistors (Si IGBTs) have validated their proposed thermal models by measured die temperatures. [19][20][21][22][23][24][25][26][27][28] In these reports, the temperature validation range is significantly limited, up to only 70 °C. It is much lower than the practical operation temperatures of the PMs intended to handle high power.…”

Section: Introductionmentioning

confidence: 99%

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Evaluation of thermal couple impedance model of power modules for accurate die temperature estimation up to 200 °C

Nakamura¹,

Kuroda²,

Nakahara³

et al. 2022

Jpn. J. Appl. Phys.

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This paper presents an experimental evaluation of the thermal couple impedance model of power modules (PMs), in which Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Eﬀect-Transistor (MOSFET) dies are implemented. The model considers the thermal cross-coupling eﬀect, representing the temperature rise of a die due to power dissipations by the other dies in the same PM. We propose a characterization method to obtain the thermal couple impedance of the SiC MOSFET-based PMs for model accuracy. Simulation based on the proposed model accurately estimates the measured die temperature of three PMs with diﬀerent die placements. The maximum error between measured and simulated die temperatures is within 8.1 ◦C in a wide and practical operation range from 70 ◦C to 200 ◦C. The thermal couple impedance model is helpful to design die placements of high power PMs considering the thermal cross-coupling eﬀect.

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