Improved depth resolution in Auger depth profiling of multilayered thin films by reactive ion sputtering

Blattner, R. J.; Nadel, S.; Evans, C. A.; Braundmeier, A.J.; Magee, C. W.

doi:10.1002/sia.740010107

Cited by 28 publications

(3 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This effect is strongly enhanced during depth profiling of porous structures like A1 oxides (155,181). [182][183][184], because of nonuniform erosion and change of sputter rate. Since the analysis of such structures is one of the main applications of sputter profiling, the loss in depth resolution accompanying these topographical features poses a serious problem.…”

Section: Summary Of Remedies--to Minimize Instrumental Ef-mentioning

confidence: 99%

“…The reason is thought to be the formation of an amorphous oxide or nitride layer which eliminates sputter effects due to crystallinity. This technique has been especially beneficial in improving the depth resolution for profiling of the interface between metal layers with AES (103,183,184) or SIMS (96,167,189). In the most systematic study of chemical sputtering, Blattner et.al.…”

Section: Initial Sample Roughness--any Original Surface Roughnessmentioning

confidence: 99%

“…In the most systematic study of chemical sputtering, Blattner et.al. (183) showed that O is to be preferred over N which in turn produces much better results than Ar. That measurement conditions also play a role is shown by the fact that Hofer and Martin (96) observed an improved depth resolution when profiling V/Ti layers with N instead of Ar, while Hofmann et al (103) report that results are very similar for these two gases.…”

Section: Initial Sample Roughness--any Original Surface Roughnessmentioning

confidence: 99%

See 2 more Smart Citations

Sputter Depth Profiling of Microelectronic Structures

Zinner

1983

J. Electrochem. Soc.

View full text Add to dashboard Cite

Reviewed are the principles and applications of sputter depth profiling for the analysis of semiconductor and microelectronic materials. Various techniques are based on sputter removal whereby either the sputtered species (in SIMS, SCANIIR) or the remaining surface (AES, XPS, ISS) are investigated. In spite of its increasing importance, there are many problems associated with sputter etching. After a general survey of the principles, a detailed discussion is devoted to the many effects which can distort sputter depth profiles and limit depth resolution. These effects can be caused by instrumental factors (nonuniformity of erosion, beam impurities, vacuum contaminants) and the sample composition or can be due to the analysis method used (information depth, matrix effects, detection limit, sample consumption). Most important are the effects caused by the sputtering ion beam itself. Among these are notably preferential sputtering, atomic mixing, surface roughness as a result of the sputter process, sample charging, surface transport, and chemical reduction. The review of applications concentrates on the measurement of the distribution of dopants and impurities in semiconductors, on the study of insulating films (in particular the Si/SiO~ interface and the oxidation of GaAs), and on the metallization problem in Si and GaAs technology.The ever-increasing miniaturization of electronic devices in VLSIC technology (1) places new demands on analytical techniques for their characterization (2, 3). Of special interest is the measurement of elemental distributions, in particular the measurement of dopant distributions in the semiconductor substrate (4, 5) and the analysis of diffusive and reactive processes between metal, semiconductor, and dielectric films (6, 7) which are the basic elements of microelectronic structures. The analytical requirements for measurement techniques include good spatial resolution as well as elemental sensitivity and specificity. Although there are interesting questions to be asked with respect to lateral dimensions, because of the planar structure of most microelectronic devices, methods for the measurement of elemental concentrations as a function of depth are of special importance. An example for the requirements for the depth resolution of such methods is given in Fig. 1 which shows calculated depth distributions of dopants in base and camel collector of a monolithic hot electron transistor (MHET) with an extremely shallow barrier raising implant.An overview of methods for the measurement of depth profiles is given in Table I. The so-called nondestructive techniques are so named n~t because they necessarily leave the sample undamaged, but because the sample surface does not have to be removed in order to obtain information about the inside. The sample interior is rather probed with penetrating ion or electron beams whereby the depth information is obtained via the energy loss experienced by the particles while traversing the sample. Rutherford backscattering spectroscopy (RBS) is based on the ...

show abstract

Section: Summary Of Remedies--to Minimize Instrumental Ef-mentioning

confidence: 99%

Section: Initial Sample Roughness--any Original Surface Roughnessmentioning

confidence: 99%

Section: Initial Sample Roughness--any Original Surface Roughnessmentioning

confidence: 99%

See 1 more Smart Citation

Sputter Depth Profiling of Microelectronic Structures

Zinner

1983

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Investigation of the surface composition changes caused by Ar⁺‐, N⁺₂‐ and He⁺‐Ion bombardment of CuNi and AgPd alloys using auger electron spectroscopy

Heichler

Langhammer

Zwanzig

1985

Cryst. Res. Technol.

View full text Add to dashboard Cite

Dctliccite(1 to Profcssor Otto R R~~M M E R on his G5t'l l)irth(lny Ttic selectivity of t h e sputtering process of Cii-Ni and Ag-Ptl allovs with different biilk coiirpositions (luring Ar+-, N$-and He+-ion bornhardmezit was stutlietl b y t h e help of Auger electron spectroscopy. It was found t h a t for Cn-Ni alloys a Ni-enrichinent and for Ag-Ptl alloys a Pd enrichment takes place compared with bulk composition. T h e selectivity of t h e sputtering process decreases with decreasing sputtering ion mass. This result was explained in t h e case of Cu-Ni alloys on t h e base of t h e dependence of eleinental sputtering coefficients on t h e sputtering ion mass.Die Selektivitiit des Sputterprozesses beim Beschulj von CiI-Niuntl Ag-P(I-Legierungeii verschietlener Voluinenzusaniinensetzung mit Ar+-, N$und He+-Ionen ( E = 2 keV) wiirde mit Hilfe der Aiigerelektronenspektroskopie untersucht. Es wircl eine Ni-Anrnicherung a n der Olierfliiche der Cu-Ni-Legierungen nnd eine Pd-Anreichernng fiir die Ag-Pd-Legierungen in1 Vergleich mr Volnmenxrisarnriiensetziing gefrinden. Die Selektivitiit tics Spiitterprozesses niniiiit niit kleiner werdender Beschuljionenmassc ah. Dieses Resultat wirtl fiir Cu-Ni-Lcgierungen arif der Basis der Ahhiingigkeit der Eletiientspiitterkoeffizienten von tlcr S~~iitteriotienmasse gcdentet.

show abstract

Sputter depth profiling of GaAlAs double heterostructures using auger electron spectroscopy

Chassé

Heichler

Langhammer

et al. 1987

Cryst. Res. Technol.

View full text Add to dashboard Cite

Sputter depth profiles of GaAlAs double heterostructures had been taken by the help of Auger electron spectroscopy (AES). The sputtering ion beam consisted of eithcr N + -or Ar+ ions. I n the case of using N + ions a n essentially better depth resolution was found comparing with Ar+ ions, especially in a sputter depth of some ym. Investigations of the sputter crater using Scanning Electron Microscopy (SEM) and Electron Probe Micro Analysis (EPMA) showed, t h a t the improved depth resolution during N2+ ion sputtering is aresult of the essential lowered sputter induced surface roughness. This should be caustd by the stronger amorphisation of the target surface using N i ions which i s a conscquence of the chemical reactions taking place at the surface with the sputtering ions.

show abstract

Improved depth resolution in Auger depth profiling of multilayered thin films by reactive ion sputtering

Cited by 28 publications

References 7 publications

Sputter Depth Profiling of Microelectronic Structures

Sputter Depth Profiling of Microelectronic Structures

Investigation of the surface composition changes caused by Ar⁺‐, N⁺₂‐ and He⁺‐Ion bombardment of CuNi and AgPd alloys using auger electron spectroscopy

Sputter depth profiling of GaAlAs double heterostructures using auger electron spectroscopy

Contact Info

Product

Resources

About

Improved depth resolution in Auger depth profiling of multilayered thin films by reactive ion sputtering

Cited by 28 publications

References 7 publications

Sputter Depth Profiling of Microelectronic Structures

Sputter Depth Profiling of Microelectronic Structures

Investigation of the surface composition changes caused by Ar+‐, N+2‐ and He+‐Ion bombardment of CuNi and AgPd alloys using auger electron spectroscopy

Sputter depth profiling of GaAlAs double heterostructures using auger electron spectroscopy

Contact Info

Product

Resources

About

Investigation of the surface composition changes caused by Ar⁺‐, N⁺₂‐ and He⁺‐Ion bombardment of CuNi and AgPd alloys using auger electron spectroscopy