Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer

Lee, Juhyun; Lee, Jeongsu; Ham, Giyul; Shin, Sunmi; Park, Joo Hyun; Choi, Hyun-Woong; Lee, Seungjin; Kim, Ju‐Young; Sul, Onejae; Jeon, Hyeongtag

doi:10.1063/1.4977887

Cited by 15 publications

(17 citation statements)

References 24 publications

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“…The obtained value is between those reported for the indirect bandgap of bulk (2.2 eV) and monolayer (2.6 eV) SnS 2 , which is reasonable considering the film thickness of ≈10 ML. Furthermore, the position of the Fermi level, which lies closer to the CB than the VB, is in line with the expected n‐type nature of SnS 2 films, and the band structure probed by VB‐XPS was comparable to previously measured SnS 2 single crystal …”

Section: Resultssupporting

confidence: 87%

“…So far, only a single research group has deposited SnS 2 by ALD using Sn(NMe 2 ) 4 and H 2 S as precursors at 150 °C with improved film quality achieved through postdeposition annealing in S or H 2 S atmosphere. Nevertheless, many crucial features of film deposition, including conformality, uniformity, and thickness control have not been demonstrated for 2D SnS 2 films.…”

Section: Introductionmentioning

confidence: 99%

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Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Mattinen

King

Khriachtchev

et al. 2018

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Semiconducting 2D materials, such as SnS , hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS films has remained a great challenge. Herein, continuous wafer-scale 2D SnS films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 °C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors.

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Section: Resultssupporting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Mattinen

King

Khriachtchev

et al. 2018

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“…2020 [196] MoCl 5 + S(SiMe 3 ) 2 375 (800, S) (t)Au/Cr/Al 2 O 3 */MoS 2 */GaN 8 ML 3.5 (2-4) n 10 2 2019 [197] 300 (900, S) (t)Au/Cr/Al 2 O 3 */MoS 2 */sapphire 5 ML ≈3 (2.3-3.2) n ≈10 3 2019 [198] 350 (900, S) (t)Au/Cr/Al 2 O 3 */MoS 2 */sapphire 4 ML 0.56 d) 6.4 (≈3-10) e) n n >10 6 10 3 2020 [202] 400 (900, S) 2020 [199] 375 (800, inert) (+ 400, CS 2 ) 2017 [118] Mo 2017 [281] 155 (400, Ar + 500, S + 900, S) 2017 [241] 150 ( 2019 [242] 150 ( 2020 [70] Sn(dmamp) 2 + H 2 S plasma 150…”

Section: Field-effect Transistorsmentioning

confidence: 99%

“…Lee et al [241] deposited a 12 nm (≈20 ML) SnS 2 film by the most commonly used Sn(NMe 2 ) 4 + H 2 S process followed by annealing at 300 °C in a S 2 /H 2 /Ar atmosphere to crystallize the films. The prepared FETs exhibited a modest I on /I off ratio of 390 and mobility of 0.0076 cm 2 V −1 s −1 on a SiO 2 substrate.…”

Section: Field-effect Transistorsmentioning

confidence: 99%

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...

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“…In order to further improve SnS 2 crystallinity, several studies have invested more effort into the ALD SnS 2 process using TDMA-Sn and H 2 S as precursors. Ham et al 163 and Lee et al 170 deposited weak hexagonal SnS 2 films at 150 C but improved the crystallinity via post-annealing processes in sulfur vapor in the range of 250 C-350 C (Figures 10D and 10E). Ham et al 163 found that a 12-nm thick asdeposited SnS 2 film remained almost the same thickness after a 20-min annealing at 300 C (Figure 10D), but changed to $9.6 nm after a 20-min annealing at 350 C (Figure 10E).…”

Section: Snsmentioning

confidence: 99%

Atomic Layer Deposition of Two-Dimensional Layered Materials: Processes, Growth Mechanisms, and Characteristics

Cai

Han

Wang

et al. 2020

Matter

118

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Since the discovery of graphene, there has been an ever-increasing interest in two-dimensional (2D) layered materials with exceptional properties. To this end, a variety of synthesis methods have been developed. However, it is still challenging to produce large-scale high-quality single-crystalline 2D materials. In this regard, atomic layer deposition (ALD) has recently shown great promise and has stimulated more and more research efforts, ascribed to its unique growth mechanism and distinguished capabilities to achieve nanoscale films with excellent uniformity, unrivaled conformality, and atomic-scale controllability. This review comprehensively summarizes recent progress on ALD for 2D atomic sheets, including 25 different materials and more than 80 ALD processes. This work highlights different technical routes to ALD, their precise controllability, and their underlying principles for 2D materials. It is expected that this work will help boost more research efforts for controllable growth of high-quality 2D materials via ALD.

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Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer

Cited by 15 publications

References 24 publications

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of Two-Dimensional Layered Materials: Processes, Growth Mechanisms, and Characteristics

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Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer

Cited by 15 publications

References 24 publications

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS2 Films

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS2 Films

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of Two-Dimensional Layered Materials: Processes, Growth Mechanisms, and Characteristics

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Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films