2009
DOI: 10.1143/jjap.48.04c035
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Improved Explicit Current–Voltage Model for Long-Channel Undoped Surrounding-Gate Metal Oxide Semiconductor Field Effect Transistor

Abstract: Using a Euclidean path integral representation for the canonical ensemble partition function we calculate the average value and fluctuations ofthe horizon area for thermal equilibrium black holes. The exciting prospect that black holes can have real thermodynamic properties was first seriously proposed by Bekenstein [l]. His proposals were later confirmed when Hawking 121 demonstrated that quantum effects lead to thermal radiation from black particular, Euclidean path integral representations for the partition… Show more

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Cited by 10 publications
(7 citation statements)
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“…Tri-gate transistors provide a dramatic combination of high-power efficiency and improved performance. In particular, attention is focused on TG MOSFETs because of their high current drive capability, lower leakage current, steep subthreshold slope, high on-off-current ratio, low body-effect coefficient, and improved short-channel effects as reported in the literature [20][21][22][23][24][25]. Although there have been reports on the design, optimization, and physical simulations of the threedimensional (3D) TG TFET structures for better performance in terms of the on-state current, subthreshold slope, and shortchannel effects [26][27][28][29], their 3D analytical modeling has been seldom reported.…”
Section: Introductionmentioning
confidence: 99%
“…Tri-gate transistors provide a dramatic combination of high-power efficiency and improved performance. In particular, attention is focused on TG MOSFETs because of their high current drive capability, lower leakage current, steep subthreshold slope, high on-off-current ratio, low body-effect coefficient, and improved short-channel effects as reported in the literature [20][21][22][23][24][25]. Although there have been reports on the design, optimization, and physical simulations of the threedimensional (3D) TG TFET structures for better performance in terms of the on-state current, subthreshold slope, and shortchannel effects [26][27][28][29], their 3D analytical modeling has been seldom reported.…”
Section: Introductionmentioning
confidence: 99%
“…Surrounding gate (SG) MOSFETs have been proposed to extend the scaling limit of conventional MOSFETs to 10nm gate length and beyond, owing their excellent control of the short-channel effects and high current driving ability [1][2][3][4][5]. Several classical models have been developed for SG MOSFETs.…”
Section: Introductionmentioning
confidence: 99%
“…Multiple gate (double gate (DG), tri-gate (TG) and surrounding gate (SG)) MOSFETs are considered a serious alternative to the control of SCEs. Among the various types of multiple-gate MOSFETs, SG MOSFETs exhibit the greatest reduction in SCEs due to their excellent electrostatic-channel control (He et al, 2007;Son et al, 2009;Chen and Luo, 2001;Jimenez and Inguiez, 2004;Colinge, 2004). In addition to the SCEs, the quantum mechanical (QM) effects occupy more and more significant role in CMOS scaling.…”
Section: Introductionmentioning
confidence: 99%