Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Liu, Wen‐Chau; Yu, Kuo-Hui; Liu, Rong Chau; Lin, Kun-Wei; Cheng, C. C.; Lin, Kuan Po; Yen, Chih−Hung; Wu, Cheng

doi:10.1063/1.1394720

Applied Physics Letters

2001

DOI: 10.1063/1.1394720

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Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Wen‐Chau Liu

Kuo-Hui Yu

Rong Chau Liu

et al.

Abstract: Articles you may be interested inDelta-doped AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with high breakdown voltages Appl. Phys. Lett. 81, 4649 (2002); 10.1063/1.1527984 Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Phys. Lett. 80, 3207 (2002); 10.1063/1.1473701 AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on SiC substrates Interactions between DX centers a… Show more

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Cited by 3 publications

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Al Ga As ∕ Ga As high-electron mobility transistor with In0.1Ga0.9As∕In0.22Ga0.78As∕In0.1Ga0.9As channel grown by metal-organic chemical vapor deposition

Lin

Chen

2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A composite-channel high-electron mobility transistor (HEMT) on GaAs substrate is designed and fabricated, using the following methodology to improve device performance: (1) an AlGaAs buffer layer, (2) an AlGaAs∕GaAs superlattice layer, and (3) an In0.1Ga0.9As∕In0.22Ga0.78As∕In0.1Ga0.9As composite channel. For comparison, a control HEMT without the composite channel is fabricated in parallel (whose channel comprises only a 125-Å-thick In0.22Ga0.78As layer). These two devices are grown by metal-organic chemical vapor deposition. The peak extrinsic transconductance (gm,ext) of the control HEMT with a gate length of 1μm is 160mS∕mm, while the peak gm,ext of the composite-channel HEMT of the identical gate length is measured to be 186mS∕mm. The on-state breakdown voltage of the composite-channel HEMT is as great as 9.7V, which represents an improvement of 1.4V over the control HEMT. The control HEMT exhibits a current gain cutoff frequency (fT) of 12.5GHz and a maximum frequency of oscillation (fmax) of 31.5GHz, while the composite-channel HEMT exhibits an fT of 16.9GHz and an fmax of 37.4GHz. Experimental data reveal that the composite-channel structure provides improved gate-to-source voltage swing, improved saturation current density, enhanced fT, enhanced fmax, and enhanced breakdown voltage without compromising electron mobility. The composite-channel HEMT is thus far superior to the control HEMT and is highly promising for use in high-frequency applications.

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Al Ga As ∕ Ga As high-electron mobility transistor with In0.1Ga0.9As∕In0.22Ga0.78As∕In0.1Ga0.9As channel grown by metal-organic chemical vapor deposition

Lin

Chen

2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Highly Stable Thermal Characteristics of a Novel In_0.3Ga_0.7As_0.99N_0.01(Sb)/GaAs High-Electron-Mobility Transistor

Hsu

Lee

et al. 2007

jjap

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A novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂Vth/∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3Ga0.7As0.99N0.01(Sb)/GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109) mS/mm at 450 (300) K.

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Comprehensive Characterization of In[sub 0.45]Al[sub 0.55]As∕In[sub 0.5]Ga[sub 0.5]As∕In[sub x]Al[sub 1−x]As Metamorphic High-Electron-Mobility Transistors on GaAs Substrates

Lin¹,

Chen²

2006

J. Electrochem. Soc.

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An In 0.45 Al 0.55 As/In 0.5 Ga 0.5 As metamorphic high-electron-mobility transistor ͑MHEMT͒ with an inverse-step InAlAs metamorphic buffer, grown by molecular beam epitaxy on GaAs substrate, is presented. A typical 1 m gate-length MHEMT has a drain current density of 471 mA/mm and a peak extrinsic transconductance of 258 mS/mm. High-frequency scattering parameter measurements yield a unity current gain cutoff frequency of f T = 35.2 GHz as well as a maximum frequency oscillation f max = 48 GHz. High two-terminal and three-terminal breakdown voltages are achieved mainly because of the high bandgap of the In 0.45 Al 0.55 As Schottky layer and the large conduction-band discontinuity ͑⌬E C ͒ at the InAlAs/InGaAs heterojunction. The large-signal power performance and noise characteristics are measured. Experimental results on the temperature-dependence study of the saturation drain current density, the extrinsic transconductance, the leakage current, the off-state breakdown voltage, and the threshold voltage ͑V th ͒ are presented. The V th shift of the device at elevated temperatures is as small as −0.294 mV/K. All of the experimental results confirm the exceptional potential of the InAlAs/InGaAs/GaAs MHEMT in microwave circuit and high-temperature applications.

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Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Cited by 3 publications

References 11 publications

Al Ga As ∕ Ga As high-electron mobility transistor with In0.1Ga0.9As∕In0.22Ga0.78As∕In0.1Ga0.9As channel grown by metal-organic chemical vapor deposition

Al Ga As ∕ Ga As high-electron mobility transistor with In0.1Ga0.9As∕In0.22Ga0.78As∕In0.1Ga0.9As channel grown by metal-organic chemical vapor deposition

Highly Stable Thermal Characteristics of a Novel In_0.3Ga_0.7As_0.99N_0.01(Sb)/GaAs High-Electron-Mobility Transistor

Comprehensive Characterization of In[sub 0.45]Al[sub 0.55]As∕In[sub 0.5]Ga[sub 0.5]As∕In[sub x]Al[sub 1−x]As Metamorphic High-Electron-Mobility Transistors on GaAs Substrates

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Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Cited by 3 publications

References 11 publications

Al Ga As ∕ Ga As high-electron mobility transistor with In0.1Ga0.9As∕In0.22Ga0.78As∕In0.1Ga0.9As channel grown by metal-organic chemical vapor deposition

Al Ga As ∕ Ga As high-electron mobility transistor with In0.1Ga0.9As∕In0.22Ga0.78As∕In0.1Ga0.9As channel grown by metal-organic chemical vapor deposition

Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor

Comprehensive Characterization of In[sub 0.45]Al[sub 0.55]As∕In[sub 0.5]Ga[sub 0.5]As∕In[sub x]Al[sub 1−x]As Metamorphic High-Electron-Mobility Transistors on GaAs Substrates

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Highly Stable Thermal Characteristics of a Novel In_0.3Ga_0.7As_0.99N_0.01(Sb)/GaAs High-Electron-Mobility Transistor