Improved outdoor performance of a-Si:H photovoltaic modules fabricated using a high speed two-step deposition of absorbers

Myong, Seung Yeop; Jeon, Sang Won

doi:10.1016/j.solmat.2014.02.003

Cited by 4 publications

(7 citation statements)

References 29 publications

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“…As commented in our previous reports [6,7], the two-step deposition method of i-a-Si:H had been developed by adjusting the deposition rate in order to meet the high throughput and high stabilized h simultaneously [12,21,22]. In addition, we reported that a-Si:H single-junction PV modules fabricated using the two-step deposition method showed a higher stability against indoor light soaking without deteriorating the production throughput compared to those fabricated using the one-step deposition method [6]. To the best of our knowledge, the electrical energy yield of large-area PV arrays comprised of a-Si:H single-junction PV modules fabricated using the two-step deposition method will be first-ever reported in this work.…”

Section: Methodssupporting

confidence: 64%

“…The higher deposition rate of i-a-Si:H has resulted in lower initial h and higher lightinduced degradation of a-Si:H PV devices, leading to lower stabilized h [19,20]. As commented in our previous reports [6,7], the two-step deposition method of i-a-Si:H had been developed by adjusting the deposition rate in order to meet the high throughput and high stabilized h simultaneously [12,21,22]. In addition, we reported that a-Si:H single-junction PV modules fabricated using the two-step deposition method showed a higher stability against indoor light soaking without deteriorating the production throughput compared to those fabricated using the one-step deposition method [6].…”

Section: Methodsmentioning

confidence: 65%

“…As evaluated in Table 1 This value is less than the simulated energy output gain of 5.8% caused by the lower temperature coefficient and less shading effect of the a-Si:H singlejunction PV generator. From our previous reports [6,7], the lightinduced degradation of a-Si:H single-junction PV modules against the outdoor exposure test would be higher than the light-induced degradation against indoor light soaking depending on the weather conditions such as temperatures and irradiance. Therefore, we demonstrated that the nominal rated power of the a-Si:H singlejunction PV modules should be determined based on the outdoor exposure test with accumulated solar irradiance of over 380 kWh/ m 2 .…”

Section: Resultsmentioning

confidence: 95%

“…For the deposition of thin-film Si layers, large-area cluster-type radio-frequency plasma-enhanced chemical vapor deposition (PECVD) apparatus was used in order to minimize the dangling bonds [5] and residual impurity cross-contamination. To achieve a high deposition rate of 0.41 nm/s, the SiH 4 concentration (¼ [SiH 4 ]/([SiH 4 ] þ [H 2 ])) is varied from 4.8% to 7.7% without any turn-off of the plasma power [6]. The 20-nm-thick interfacial part of i-a-Si:H was deposited using the low SiH 4 concentration to improve the p/i interface, whereas the 230-nm-thick bulk part of ia-Si:H was deposited using the high SiH 4 concentration to obtain the high deposition speed.…”

Section: Methodsmentioning

confidence: 99%

“…The 20-nm-thick interfacial part of i-a-Si:H was deposited using the low SiH 4 concentration to improve the p/i interface, whereas the 230-nm-thick bulk part of ia-Si:H was deposited using the high SiH 4 concentration to obtain the high deposition speed. The detailed deposition conditions for the component layers were described in our previous reports [6,7]. The monolithic series integration of the a-Si:H single-junction PV modules was realized via the plurality of three parallel laserscribed patterns.…”

Section: Methodsmentioning

confidence: 99%

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Performance of Si-based PV rooftop systems operated under distinct four seasons

Myong¹,

Park²,

Jeon³

2015

Renewable Energy

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a b s t r a c tWe have investigated the electrical energy yield of hydrogenated amorphous silicon (a-Si:H) singlejunction and crystalline (c-Si) photovoltaic (PV) rooftop systems operated under distinct four seasons. The impact of the module type and installed tilt angle on the annual electrical energy yield has been monitored and then compared with the data predicted by the computer simulation. Despite a good temperature coefficient and less shading effect of a-Si:H single-junction modules, the energy output gain of the a-Si:H single-junction PV generator is only 2.7% compared to the c-Si PV generator installed using c-Si PV modules. It is inferred that a nominal rated power of the a-Si:H single-junction modules determined by an indoor light soaking test is not suitable for the design of PV systems operated under distinct four seasons. Thus, the nominal rated power of the a-Si:H single-junction PV modules should be determined through a proper outdoor exposure test considering thermal annealing and light soaking effects under various seasonal weather conditions. In addition, it is found that the performance of the Sibased PV rooftop systems operated under distinct four seasons could be improved by simply toggling the tilt angle considering the plane-of-array irradiance and snowfall effect.

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