“…Currently, widely studied device structures are divided into inverted (p-i-n) structure and formal (n-i-p) structure, among which the inverted structure is favored by people due to its high stability, low hysteresis, low fabrication cost, and low-temperature fabrication. [6][7][8][9] Hole transport materials such as poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS), [10,11] poly-bis (4phenyl) (2,4,6-trimethylphenyl) amine (PTAA), [12,13] poly (3-hexylthiophene-2,5-diyl) (P3HT), [14,15] and nickel oxide (NiO x ) [16,17] are commonly used in inverted structures. Inorganic hole transport materials NiO x have received extensive attention due to its low price, high stability, large bandgap, and ease of mass production, compared with the high price and poor stability of organic hole transport materials.…”