Improved performance of vertical-cavity surface-emittinglaser diodes with Au-plated heat spreading layer

Wipiejewski, T.; Young, D.B.; Peters, M.G.; Thibeault, B.J.; Coldren, L.A.

doi:10.1049/el:19950190

Cited by 40 publications

(17 citation statements)

References 5 publications

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“…Previous publications presented enhancements in top-emitting VCSELs with 980-nm wavelength P max of approximately 107% achieved by attaching 20-μm oxide aperture diameter VCSELs to a copper substrate after substrate removal [15]. In [13], 980-nm bottom-emitting VCSEL demonstrated about a 60% increase in P max using 8.5-μm of plated Au on 120x120μm 2 pads around 21-μm pillars as heatsinks. 850-nm flip-chip bonded VCSELs with a 10-μm oxide aperture diameter, as reported in [19], exhibited a 60% increase in P max by evaporating 3 to 12-μm of indium.…”

Section: Resultsmentioning

confidence: 99%

“…Fig. 4 presents a summary of previously published R th of VCSELs that were realized using different techniques [4,6,11,[13][14][15][20][21][22]. Using the measured R th values, the VCSEL active region temperature was estimated as described in [14].…”

Section: Resultsmentioning

confidence: 99%

“…In addition to intrinsic laser dynamics [6,7] and electrical parasitic circuit effects [6,[8][9][10], self heating is one of the aspects that presently hinders the frequency modulation bandwidth and emitted optical power of VCSEL technology [6,[11][12][13][14][15]. Caused by their small size and high thermal resistivity of the distributed Bragg reflectors (DBRs), the considerable self-heating at elevated bias current (I bias ) necessary for higher emitted optical power and/or modulation speeds increases the carrier leakage, threshold gain, and nonradiative recombination in addition to reducing the gain and differential gain.…”

Section: Introductionmentioning

confidence: 99%

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Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

Al-Omari

Alias

Lear

2012

2012 IEEE 3rd International Conference on Photonics

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Top-emitting, oxide-confined, polyimideplanarized 980-nm VCSELs with copper-plated heatsinks were fabricated and characterized. Increasing the plated heatsink radius from 0-μ μ μ μm to 4-μ μ μ μm larger than the mesa diameter for lasers with 8-μ μ μ μm oxide aperture diameter reduced the measured thermal impedance, increased the maximum bias current density, and increased the maximum output optical power achieved by a 29%, 37%, and 73%, respectively. VCSELs with oxide aperture diameter and heatsink overlap of 8-μ μ μ μm and 4-μ μ μ μm, respectively, demonstrated 17ºC decrease in the internal device temperature (i.e. active region temperature) at the maximum output optical power. Devices with similar mesa diameters of 26-μ μ μ μm and different heatsink overlaps exhibited a threshold bias current and a total series resistance of (630±4%)μ μ μ μA and ~95Ω Ω Ω Ω, respectively.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

Al-Omari

Alias

Lear

2012

2012 IEEE 3rd International Conference on Photonics

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“…Наиболее радикальное решение проблемы теплового сопротивле-ния ВИЛ связано с формированием дополнительного теплоотвода из материалов с высокой теплопроводностью. Так, в конструкции ВИЛ с выводом света через подложку размеры мезы РБО p-типа могут быть уменьшены на 60% при сохранении требуемого размера токовой апер-туры по сравнению с таковыми для конструкции лазера с выводом света вверх, а сама меза может быть дополнительно покрыта толстым слоем гальванического золота, что позволяет снизить тепловое сопротивление лазера в 2 раза и увеличить максимальную выходную мощность на 60%, а также улучшить растекание тока по площади апертуры и снизить емкость на оксидной апертуре [98]. Следует отметить, что данная концепция применима лишь в области прозрачности используемой подложки для лазерного излучения.…”

Section: тепловые эффектыunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

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“…There are three approaches can solve this problem: by optimizing the wavelength offset between the gain peak and the cavity mode, 7 by suppressing the heat generation, 1 and by enhancing the heat dissipation. 11 VCSELs with polyimide coatings have been extensively used because of the planarization provided by the polyimide. These devices have demonstrated optical and electrical properties that are superior to other VCSELs.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of a planarized vertical-cavity surface-emitting laser by using the silicon oxide

Tsai

Lee

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inBuried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors Appl. Phys. Lett. 101, 101103 (2012); 10.1063/1.4750062Multiwavelength fabrication of vertical-cavity surface-emitting lasers based on asymmetric one-dimensional photonic crystalInterpretation of polarization pinning due to scattering loss differentiation in asymmetric vertical-cavity surfaceemitting laser cavitiesIn this article, an alternative method is presented to fabricate a planar-type oxide-confined 850-nm vertical-cavity surface-emitting laser ͑VCSEL͒. The threshold voltage, threshold current, light output power, external differential quantum efficiency, emission spectrum, and dynamic response of VCSELs planarized with a silicon oxide ͑SiO x ͒ have been evaluated. These devices exhibit excellent static characteristics, including a threshold voltage ͑V th ͒ of 2.05 V corresponding to a threshold current of 0.88 mA, a minimum threshold current of 0.7 mA near 60°C, a maximum output power of 4.28 mW at 11 mA, a maximum external differential quantum efficiency ͑ ex ͒ of 43% just above threshold, and an operation temperature beyond 130°C. In addition, the transverse modes of the device initially are low-order, while high-order modes appear at elevated current levels. The fundamental transverse mode at the longest wavelength increases with injected current with a redshift of 0.49 nm/ mA due to the Joule effect. Since the thermal resistance of the VCSEL with a SiO x buried layer is less than that of device without it, the VCSEL with the buried layer displays less redshift and better performance. Finally, the VCSEL with a SiO x buried layer shows a clear eye-opening feature as operating at 2.488 Gbit/ s with a bias current of 2 mA. Further increasing the current level, the device can work at the maximum bit rate of 8 Gbit/ s and a bias current of 3.7 mA.

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Improved performance of vertical-cavity surface-emittinglaser diodes with Au-plated heat spreading layer

Cited by 40 publications

References 5 publications

Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Fabrication and characterization of a planarized vertical-cavity surface-emitting laser by using the silicon oxide

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