1978
DOI: 10.1109/t-ed.1978.19363
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Improved performance thin solar cells

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Cited by 19 publications
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“…For example, Nagashima et al use "base" to refer to the p-type IBC contact in their cell, 4 while Rienaecker et al use "base" to refer to both the front and rear n-type majority carrier contact in their device. 5 It can also be confusing because a 3T solar cell can consist of a single band gap with multiple p−n junctions 6 or multiple single-junction absorbers interconnected in a way that results in three terminals. 7 In this Perspective, we first propose a taxonomy that can be applied to all 3T devices to facilitate future scientific discussion.…”
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confidence: 99%
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“…For example, Nagashima et al use "base" to refer to the p-type IBC contact in their cell, 4 while Rienaecker et al use "base" to refer to both the front and rear n-type majority carrier contact in their device. 5 It can also be confusing because a 3T solar cell can consist of a single band gap with multiple p−n junctions 6 or multiple single-junction absorbers interconnected in a way that results in three terminals. 7 In this Perspective, we first propose a taxonomy that can be applied to all 3T devices to facilitate future scientific discussion.…”
mentioning
confidence: 99%
“…There have been fewer studies focusing on 3TT devices with a bIBC bottom cell. The concept of a bIBC 3T Si cell was first proposed in 1978, without a higher band gap top-cell, by exploiting the transistor effect . Recent modeling and experimental work has shown that it is possible to operate a bIBC 3T Si device with very little loss. , However, there have been prior reports that incorrectly assume that the power in the RZ (i.e., IBC) circuit of a perovskite/s/pbIBC cell can be extracted independently of the state of the top cell, which greatly oversimplifies the operation of this device .…”
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confidence: 99%