Improved performances of InGaP Schottky contact with Ti/Pt/Au metals and MSM photodetectors by (NH4)2Sx treatment

Performance characterization of InGaP Schottky contact with ITO transparent electrodes

“…5 The similar degradation phenomena of Schottky performances for InGaP in contact with ITO have been found in the paper, but their physical mechanisms would be an interesting topic in the further study. To improve the performance of associated photodetectors and optical sources, the transparent ITO electrodes in contact with InGaP would be promising.…”

“…5 Moreover, the thermal degradation of ITO Schottky contacts on GaAs had also been studied. While the performance of the Schottky barrier height and the reverse breakdown voltage are degraded at temperatures higher than 300°C.…”

High performance III-V photoelectrodes for solar water splitting via synergistically tailored structure and stoichiometry

“…In summary, we demonstrated an approach that can simultaneously enhance the light absorption, catalytic efficiency, and durability of GaInP 2 photocathodes in the HER of solar water splitting by collaboratively exploiting corrosion-resistant surface stoichiometry and structurally tailored reactive interface. The sulfur treatment has been demonstrated effective for passivating the surface states and suppressing the surface recombination in a wide range of semiconductor materials 37,41,42 . We therefore expect our approach capitalizing the synergistic effect of surface nanostructure and corrosion-resistant surface stoichiometry would be broadly applicable to various semiconductor photoelectrodes (e.g., III–V, III-N) and electrochemical reactions (e.g., oxygen evolution reaction (OER), CO 2 reduction) that can benefit from simultaneously enhanced light absorption, catalytic efficiency, and corrosion resistance, all without solely relying on the development of new protective materials, thereby offering practical pathways towards high efficiency, high durability PEC solar water splitting.…”

Monolithic Photoreceiver Constructed With a ZnSe MSM Photodiode and an InGaP/GaAs HBT

“…In the dark case, the low dark current of 4 nA at an applied bias of 5 V may be attributed to the low carrier concentration and low defect density of the ZnSe epilayer. A gradual rise of the dark current with applied biases may result from the counteraction of applied bias owing to the induced reverse electric field caused by surface-trapped charges [19]. The photocurrent of the MSM-PD measured under input light with a wavelength of 440 nm is also shown in Fig.…”