Improved thermal management of power cells with adding cooling path from collector to ground

Ting, Tian; Sun, Xun; Gao, Huai; Lu, Shengli

doi:10.1049/el.2019.0364

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…The power cell is comprised of 64 HBTs, where each HBT's emitter area is 80 µm 2 . The substrate has a 100µm thickness [17]. Two backside thermal vias (BTVs) are situated between two adjacent transistor arrays.…”

Section: Measured Devicesmentioning

confidence: 99%

Junction Temperature Prediction Model for GaAs HBT Devices Based on ASO-ELM

2023

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In this study, an accurate temperature prediction model is proposed for GaAs HBT, which considers both the bias voltage and current rather than power consumption only. The increase in temperature is closely related to the heat source property, which leads to a complex interaction between the lattice vibration and the uneven distribution of the electric field and current density. To improve the accuracy and stability of the temperature prediction model, a machine learning method of Extreme Learning Machine (ELM) optimized with an Atomic Search Algorithm (ASO) is introduced. The validity of the model is verified by comparing it with experimental observations by the QFI InfraScope TM temperature mapping system. The predicted temperatures for an 8 × 8 HBT power cell fabricated with 2 μm GaAs technology show good agreement with the measurement results, with a ±2 °C error and a relative error deviation below 3%. This demonstrates the superior performance of the proposed model in accurately predicting the temperature of GaAs HBT.

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Section: Measured Devicesmentioning

confidence: 99%

Junction Temperature Prediction Model for GaAs HBT Devices Based on ASO-ELM

2023

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“…Notably, GaN devices are frequently operated under high frequency and voltage conditions due to their material characteristics, resulting in extremely high-power densities and high temperatures, especially in the channel region. The power density of GaN devices is an order of magnitude higher than that of GaAs devices [4,5]. According to the Arrhenius life-stress model, the mean time to failure (MTTF) of a device is strongly correlated with the channel temperature, and a tiny increase in temperature decreases its lifetime notably.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Thermal Management of GaN Power Amplifier Electronics with Micro-Pin Fin Heat Sinks

Kang

Jia

et al. 2020

Electronics

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This study introduces an enhanced thermal management strategy for efficient heat dissipation from GaN power amplifiers with high power densities. The advantages of applying an advanced liquid-looped silicon-based micro-pin fin heat sink (MPFHS) as the mounting plate for GaN devices are illustrated using both experimental and 3D finite element model thermal simulation methods, then compared against traditional mounting materials. An IR thermography system was equipped to obtain the temperature distribution of GaN mounted on three different plates. The influence of mass flow rate on a MPFHS was also investigated in the experiments. Simulation results showed that GaN device performance could be improved by increasing the thermal conductivity of mounting plates’ materials. The dissipated power density of the GaN power amplifier increased 17.5 times when the mounting plate was changed from LTCC (Low Temperature Co-fired Ceramics) (k = 2 Wm−1 K−1) to HTCC (High-Temperature Co-fired Ceramics) (k = 180 Wm−1 K−1). Experiment results indicate that the GaN device performance was significantly improved by applying liquid-looped MPFHS, with the maximum dissipated power density reaching 7250 W/cm2. A thermal resistance model for the whole system, replacing traditional plates (PCB (Printed Circuit Board), silicon wafer and LTCC/HTCC) with an MPFHS plate, could significantly reduce θjs (thermal resistance of junction to sink) to its theoretical limitation value.

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