Improvement in deposition rate and quality of films prepared by "thin liquid-film" ferrite plating method.

吉孝, 後藤; 裕, 玉浦; 正紀, 阿部; 学, 五味

doi:10.3379/jmsjmag.11.263

Cited by 14 publications

(8 citation statements)

References 4 publications

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“…2(a) and 4(a)) in 15 h, the longest deposition studied under these conditions (an average rate of ϳ65 nm⅐h Ϫ1 ). In comparison, Goto et al 18,19 grew spinel ferrite films up to 800 nm thick at rates of 960-2400 nm⅐h -1 , and Ito and Nakamura 22 grew ZnO films 1.0 m thick at 600 nm⅐h -1 ; both groups used LFD.…”

Section: (1) Comparison With Other Studiesmentioning

confidence: 99%

“…9 More constant solution conditions can be achieved by continuously flowing fresh precursor solution through the deposition chamber. 13 This technique, called liquid flow deposition (LFD), has been used by Goto et al 18,19 for the preparation of polycrystalline spinel ferrite films, by Ito and co-workers 20 -22 for CdS and ZnO films, and by Fuchs et al 23 for TiO 2 films.…”

Section: Introductionmentioning

confidence: 99%

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Nanocrystalline Tin Oxide Thin Films via Liquid Flow Deposition

Supothina¹,

Guire²,

Heuer³

2003

Journal of the American Ceramic Society

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Nanocrystalline films of SnO2 were deposited by liquid flow deposition (LFD), i.e., by flowing aqueous solutions of SnCl4·5H2O and HCl over single‐crystalline silicon substrates at 80°C. The substrates were either oxidized and fully hydrolyzed (bare silicon) or oxidized, hydrolyzed, and then coated with siloxy‐anchored organic self‐assembled monolayers (SAMs). Continuous, adherent films formed on sulfonate‐ and thioacetate‐functionalized SAMs; adherent but sometimes discontinuous films formed on bare silicon and methyl‐functionalized SAMs. The films contained equiaxed cassiterite crystals, ∼4–10 nm in size. The film thickness increased linearly with deposition time. The maximum growth rate observed was 85 nm·h−1 on sulfonate SAM, and the maximum film thickness obtained was 1 μm. A new dimensionless parameter, the normalized residence time, τ, was introduced for the purpose of interpreting the influence of solution conditions (i.e., degree of supersaturation, as controlled via pH, and tin concentration) and flow characteristics (flow rate and the configuration of the deposition chamber) on the growth rate in LFD processes. The results were consistent with a particle attachment mechanism for film growth and inconsistent with heterogeneous nucleation on the substrate.

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Section: (1) Comparison With Other Studiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nanocrystalline Tin Oxide Thin Films via Liquid Flow Deposition

Supothina¹,

Guire²,

Heuer³

2003

Journal of the American Ceramic Society

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“…Fea-X CoX 04 exhibit preferential crystallographic orientation along (100) and (111) planes, respectively, parallel to the surface. This texture is most prominent when the NaN02 concentration is 1.0 and 1.5 g/l, respectively [10]. Not only C02+ but also Ni 2 + and Zn2+ causes the (111) texture as their concentrations in the film increase ( Fig.…”

Section: Deposition Rate and Structure Of Filmmentioning

confidence: 92%

Low Temperature Ferrite Film Preparation by Ferrite Plating Technique

1989

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Ferrite plating facilitates formation of polycrystalline spinel ferrite films (Feax M x 04, M=Fe, Co, Ni, Zn, etc.) at low temperature in an aqueous solution. Though prepared at low temperature «90 t), the.magneti? properties of the films. are .as good as those in bulk samples, the ferrite platIng openIng the door.to new f~rr~te fIlm devices using a non-heat-resistant substrate. In this paper ~e descrIb~ the prIncI~le and methods of ferrite plating and report structural and magnetIc propertIes of the fIlms as well as the deposition rat~ of the films in connection with the conditions under which the ferrite plating is performed.

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“…In LFD, the reactant solution is flowed past the substrate at a controlled rate. It was first developed in the late 1980s [54,55] as a variation of ferrite plating. In LFD, the reactants are replenished continuously, allowing more constant composition of solution and more constant degree of supersaturation to be maintained.…”

Section: Process Controlmentioning

confidence: 99%

“…With appropriate adjustment of solution parameters, LFD can be applied to any CBD technique (except perhaps SILAR). Ferrites [54,55], CdS, ZnO [2], SnO 2 [56] and TiO 2 [57] have been deposited using LFD at constant and high growth rates. In contrast, ZrO 2 films did not grow significantly faster or thicker via LFD than via conventional CBD [58].…”

Section: Process Controlmentioning

confidence: 99%