Improvement in Surface Morphology and Crystal Epitaxial CaF<sub>2</sub> on Si (100) Through two Mbe Growth Stages

Morimoto, Yoshihisa; Shoichiro, Matsumoto; Sudo, Shoji; Yoneda, Kiyoshi

doi:10.1557/proc-116-413

Cited by 4 publications

(1 citation statement)

References 2 publications

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“…Generally, (001) CaF, growth on Si(001) substrates proceeds with ill facets. This growth preference can be overcome by employing a two step growth method P that results in smooth films [11]. The method used by us includes an initial nucleation stage at a substrate temperature of about 5500C where a 50-100 nm thick film is deposited followed by a ramp in substrate temperature up to about 7500C where a second, smooth layer is grown.…”

Section: Resultsmentioning

confidence: 99%

Substrate Engineering with Fluoride Buffer Layers on Si

Taylor

Xiao

et al. 1991

MRS Proc.

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Here, we report on our efforts to engineer Si substrates for growth of compound semiconductors through the use of suitable epitaxial buffer layers of CaF 2 , SrF 2 , and BaF 2 using a recently installed dual growth chamber MBE system. We have also developed new graphite-heater K-cells which have demonstrated reliable, high temperature deposition of the fluorides with excellent uniformity across substrates up to 6 inches in diameter. Excellent epitaxial quality(xmin< 5.0%) and smooth surface morphologies have been achieved for epitaxial CaF 2 and SrF 2 grown directly on Si(lll) and BaF 2 grown directly on Si(001). The BaF 2 is (111) oriented on the Si(001) substrates with one of the {1TO} planes of the BaF 2 aligned with the (1TO) plane in the Si(001). PbS 1 _5Se 0 of excellent epitaxial quality has recently been demonstrated on the BaF 2 (111)/Si(001) films. Comparable epitaxial quality has been demonstrated for'CaF 2 grown on Si(001) substrates using a two step growth method. We also report on preliminary results on epitaxial mixed fluoride growth on Si(111) and Si (001) substrates.

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Section: Resultsmentioning

confidence: 99%

Substrate Engineering with Fluoride Buffer Layers on Si

Taylor

Xiao

et al. 1991

MRS Proc.

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Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates

Blunier¹,

Zogg²,

Weibel³

1988

Applied Physics Letters

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(100) oriented BaF2 has been grown epitaxially onto Si(100) despite its large lattice mismatch of 14% and preferred (111) growth mode. (100) epitaxy was achieved using thin intermediate CaF2 and/or SrF2 buffers to overcome the mismatch in a stepwise manner. Growth is three dimensional, and a roughness of the top surface in the 10 nm range was obtained. Ion channeling minimum yields are below 4% even for layers as thin as 3000 Å. Thermal misfit strains relieve due to movement of misfit dislocations. The layers are intended for use as epitaxial buffers for growth of compound semiconductors on Si(100) substrates with up to 20% total lattice mismatch.

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Epitaxial growth of superconducting YBa2Cu3O7−x on Si(100) with CaF2 as intermediate buffer

Tiwari¹,

Blunier²,

Zogg³

et al. 1992

Journal of Applied Physics

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Epitaxial superconducting YBa2Cu3O7−x (YBCO) thin films have been grown on Si(100) using CaF2 as an intermediate buffer layer. The CaF2(100) layers were grown by molecular beam epitaxy while for the YBCO layers a laser ablation process was used. Electron channeling patterns of the YBCO surface show the characteristic four-fold symmetry for c-axis orientation. The epitaxial relationship is (001)YBCO//(001)Si and [010]YBCO//[110]Si. This corresponds to a lattice mismatch of only 1% in the a-b-YBCO interface plane. The 60-nm-thick layers are crack free. Magnetic shielding properties of the epitaxial YBCO layers have been studied by measuring the zero temperature penetration depth λab(0) and the power law dependence of the transition temperature versus magnetic field.

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Improvement in Surface Morphology and Crystal Epitaxial CaF₂ on Si (100) Through two Mbe Growth Stages

Cited by 4 publications

References 2 publications

Substrate Engineering with Fluoride Buffer Layers on Si

Substrate Engineering with Fluoride Buffer Layers on Si

Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates

Epitaxial growth of superconducting YBa2Cu3O7−x on Si(100) with CaF2 as intermediate buffer

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Improvement in Surface Morphology and Crystal Epitaxial CaF2 on Si (100) Through two Mbe Growth Stages

Cited by 4 publications

References 2 publications

Substrate Engineering with Fluoride Buffer Layers on Si

Substrate Engineering with Fluoride Buffer Layers on Si

Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates

Epitaxial growth of superconducting YBa2Cu3O7−x on Si(100) with CaF2 as intermediate buffer

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Improvement in Surface Morphology and Crystal Epitaxial CaF₂ on Si (100) Through two Mbe Growth Stages