Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts

Soueidan, Maher; Ferro, Gabriel; Jacquier, Christophe; Godignon, P.; Pezoldt, Jörg; Lazar, Mihai; Nsouli, B.; Monteil, Y.

doi:10.1016/j.diamond.2006.03.015

Cited by 10 publications

(7 citation statements)

References 25 publications

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“…In this context, localized p‐type epitaxy is an attractive fabrication approach toward more robust and reliable p–n junctions with lower crystal defect densities. In this perspective, Vapor–Liquid–Solid (VLS) epitaxy has been previously proposed as an alternative way to implement localized Al doping at high concentrations . In this paper, we present further improvements which have resulted in the demonstration, by this technique, of true p–n junctions with low leakage current, without any annealing performed after the epitaxy.…”

Section: Introductionmentioning

confidence: 99%

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Sejil

Lazar

Carole

et al. 2017

Phys. Status Solidi A

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This paper deals with localized epitaxy of highly p-doped 4H-SiC, based on VLS transport, and intended to be used both for the emitter of PN or PiN devices, and for the peripheral protection of power devices. The goal was to fill-in 1 mm-deep wells, plasma etched, into n-type epilayers. We have previously shown that true p-n junctions with low leakage currents can be achieved using this alternative technique without any post-growth annealing at high temperatures. We report here for the first time, the filling of etched wells up to 900 nm with p þþ SiC, presenting a regular and uniform surface morphology. In this work, we also present correlations between the physical analyses of our SiC VLS epitaxy, and the electrical characterizations performed on p/n diodes with VLS grown, locally p-type doped emitter.

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Section: Introductionmentioning

confidence: 99%

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Sejil

Lazar

Carole

et al. 2017

Phys. Status Solidi A

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“…This is why, SiGe liquid phase was selected for this work since it is only composed of iso-electronic group IV elements. Furthermore, using such melts, SiC growth was already demonstrated by VLS transport but on a-SiC substrate only [4,9]. The transposition to Si substrate is studied in the present work.…”

Section: Introductionmentioning

confidence: 89%

Investigation of 3C-SiC growth on Si(111) by vapor–liquid–solid transport using a SiGe liquid phase

Berckmans¹,

Auvray²,

Ferro³

et al. 2012

Journal of Crystal Growth

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“…Indeed, by using this approach, a localized heavily p-type SiC epitaxy could be achieved and employed for the fabrication of p-n junctions [ 122 , 123 ].…”

Section: Non-conventional Annealing and Doping Methodsmentioning

confidence: 99%

“…After this VLS sequence, the unreacted Al-Si alloy is removed using acid solutions. More details on this techniques are reported in [ 121 , 122 , 123 ].…”

Section: Figurementioning

confidence: 99%

Selective Doping in Silicon Carbide Power Devices

et al. 2021

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Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. This paper concisely reviews the main selective doping techniques for SiC power devices technology. In particular, due to the low diffusivity of the main impurities in SiC, ion implantation is the method of choice to achieve selective doping of the material. Hence, most of this work is dedicated to illustrating the main features of n-type and p-type ion-implantation doping of SiC and discussing the related issues. As an example, one of the main features of implantation doping is the need for post-implantation annealing processes at high temperatures (above 1500 °C) for electrical activation, thus having a notable morphological and structural impact on the material and, hence, on some device parameters. In this respect, some specific examples elucidating the relevant implications on devices’ performances are reported in the paper. Finally, a short overview of recently developed non-conventional doping and annealing techniques is also provided, although these techniques are still far from being applied in large-scale devices’ manufacturing.

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Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts

Cited by 10 publications

References 25 publications

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Investigation of 3C-SiC growth on Si(111) by vapor–liquid–solid transport using a SiGe liquid phase

Selective Doping in Silicon Carbide Power Devices

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