2012
DOI: 10.1016/j.jnoncrysol.2011.12.103
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Improvement of a-Si1−xGex:H single-junction thin-film solar cell performance by bandgap profiling techniques

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Cited by 8 publications
(2 citation statements)
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“…With the optimized cell parameters, there is no obvious difference in V oc and FF, therefore, higher cell efficiency is harvested. It should be noted that the present FF of the single junction cells are relatively low comparing to previous reports [28,29] due to poor shunt resistance.…”
Section: Resultscontrasting
confidence: 69%
See 1 more Smart Citation
“…With the optimized cell parameters, there is no obvious difference in V oc and FF, therefore, higher cell efficiency is harvested. It should be noted that the present FF of the single junction cells are relatively low comparing to previous reports [28,29] due to poor shunt resistance.…”
Section: Resultscontrasting
confidence: 69%
“…Unfortunately, these promising results were achieved using rigid glass substrates, it would be more useful to recognize it using flexible substrates. With adjustable bandgap, a-SiGe:H solar cells have shown very good red light response [27][28][29][30][31]. It is particularly useful when it is used in flexible a-Si/a-SiGe:H and a-Si/a-SiGe:H/a-SiGe:H multi-junction structure [32][33][34][35][36].…”
Section: Introductionmentioning
confidence: 99%