Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H–SiC metal–oxide–semiconductor capacitors

Cho, Won-Ju; Kosugi, Ryoji; Fukuda, Kenji; Arai, Kazuo; Suzuki, Satoshi

doi:10.1063/1.1289806

Cited by 26 publications

(29 citation statements)

References 20 publications

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“…Results of 18 O and 16 O quantification are shown in Table I along with the estimated film thickness as detailed above. One can notice that when the 18 O 2 atmosphere was employed, 16 O was not observed, within the detection limit of the RBS technique.…”

Section: Resultsmentioning

confidence: 99%

“…• C. 12,13,18 On the other hand, the quality of the Pt electrode degrades at anneal temperatures greater than 600…”

Section: Methodsmentioning

confidence: 99%

“…Three different routes were used to grow dielectric films on SiC. SiO 2 films were grown at 1100 o C for 4 h in a 100 mbar static atmosphere of O 2 isotopically enriched to 97% in the 18 O isotope (O 2 -route). Silicon oxynitride film growth in NO (NO-route) or NOannealing of Si 18 O 2 /SiC (O 2 /NO-route) were performed at 1250 o C for 2 h at a NO flow rate of 0.1 SLM.…”

Section: Methodsmentioning

confidence: 99%

“…Silicon oxynitride film growth in NO (NO-route) or NOannealing of Si 18 O 2 /SiC (O 2 /NO-route) were performed at 1250 o C for 2 h at a NO flow rate of 0.1 SLM. Concerning H 2 annealing temperature, previous works reported improvement in D it and channel mobility for 4H-SiC (0001) MOSFETs using POA in hydrogen at temperatures ≥ 800• C. 12,13,18 On the other hand, the quality of the Pt electrode degrades at anneal temperatures greater than 600• C. …”

mentioning

confidence: 99%

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Hydrogen Incorporation Dependence on the Thermal Growth Route in Dielectric/SiC Structures

Corrêa

Soares

Tanner

et al. 2013

ECS J. Solid State Sci. Technol.

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The incorporation of hydrogen in dielectric/SiC structures and Pt/dielectric/SiC structures whose dielectric films were thermally grown in O 2 , NO, or O 2 followed by annealing in NO was investigated. The amount and the distribution of hydrogen incorporated and the capacitance-voltage characteristics were observed to be dependent on the thermal growth route employed. Hydrogen was mainly incorporated in the dielectric film/SiC interface region and larger amounts were incorporated when the Pt electrode was used. Annealing in hydrogen increased the negative shift in the flatband voltage, which was more pronounced when the Pt electrode was used in the case of NO-annealed To overcome the limits of silicon-based power devices, new semiconductor materials are necessary. Silicon carbide (SiC) is a wide bandgap semiconductor that presents adequate properties for high-power, high-temperature, and high-frequency electronics. These characteristics have been recently explored in the first commercially available metal-oxide-semiconductor field effect transistors (MOSFETs).1 However, reducing the density of electron traps at and near the SiO 2 /semiconductor interface, to improve the channel carrier mobility 2 and reliability of MOSFET devices, still remains as the main technological challenge. 3,4 The high density of interface states (D it ) in the SiO 2 /SiC interface region has been attributed to carbon related defects generated during the thermal oxidation of the SiC. [5][6][7] In order to improve the quality of this interface, post-oxidation annealing (POA) in nitric oxide (NO) has been employed as a successful method to reduce D it and to improve device reliability. 4,8 The effect of the incorporation of N was related to both the removal and the passivation of residual C in the dielectric/SiC interface region.9-11 The use of POA in H 2 also led to reduction in D it below the conduction band for n-type 4H-SiC (0001) MOS structures 12 and improve the channel mobility of 4H-SiC (0001) MOSFETs. 13 Moreover, combining POAs in NO and in H 2 using platinum (Pt) as the electrode metal caused a complementary reduction in D it 10,14 and enhanced field-effect mobility in 4H-SiC (0001) MOSFETs 15 compared with only NO or only H 2 annealings. The passivation effect of POA in H 2 has been investigated only in the case of thermal growth in O 2 with and without POA in NO, but the consequences of POA in H 2 in dielectric films directly grown in NO still remain unknown. Results for dielectric films grown on the carbon face of the SiC single-crystal indicate that the direct growth in NO led to better breakdown characteristics than NO-annealed oxides.3 Reliability results for silicon-faced 4H-SiC by Jamet et al.9 also revealed that dielectric films grown directly in NO exhibit a higher resistance to high field stress than previously grown dry oxide films annealed in NO. Furthermore, MOS structures with dielectric films grown in NO presented superior capacitance-voltage (C-V) characteristics than SiO 2 /SiC annealed in NO. 16,17 Therefore...

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Section: Resultsmentioning

confidence: 99%

“…• C. 12,13,18 On the other hand, the quality of the Pt electrode degrades at anneal temperatures greater than 600…”

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Hydrogen Incorporation Dependence on the Thermal Growth Route in Dielectric/SiC Structures

Corrêa

Soares

Tanner

et al. 2013

ECS J. Solid State Sci. Technol.

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“…Our results show that using a RTA temperature of 400 • C does not impact the interface state density, however, the D it value continues to decrease as the RTA temperature increases to 600 and 700 value in SiC MOS devices is presumed to be the dangling bonds, carbon clusters and residual carbon in the oxide near in the interface. 22 Therefore, we consider the decrease in the D it value at 600 • C to be a result of termination of the residual carbon and dangling bonds. The current-voltage (I-V) of the capacitors can be transformed into current density-electric field (J-E) curves using the following equations:…”

Section: Resultsmentioning

confidence: 99%

Electric properties of La2O3/SiO2/4H-SiC MOS capacitors with different annealing temperatures

Wang¹,

Jia²,

Li³

et al. 2015

AIP Advances

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In this work, we describe a rapid thermal annealing (RTA) process for the La2O3/SiO2/4H-SiC interface and investigate its effect on the material’s electrical properties. Our results indicate that the trap charge density and interface state density (Dit) are reduced as the RTA temperature increases due to the termination of residual carbon and dangling bonds. We demonstrate that the sample obtained after RTA at 500 °C has the highest breakdown electric field (Efb) (7 MV/cm) due to a decrease in the trap charge density and an improvement in the interfacial properties. However, when the RTA temperature reaches 600 °C or higher, a lower Efb value (1.2 MV/cm) is obtained due to leakage routes generated by the crystallization of La2O3. Based on our results, we conclude that the ideal choice for the RTA temperature is 500 °C.

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Device Processing Chain and Processing SiC in a Foundry Environment

Salemi

Kang

Sung

et al. 2021

Wide Bandgap Semiconductors for Power Electronics

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Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H–SiC metal–oxide–semiconductor capacitors

Cited by 26 publications

References 20 publications

Hydrogen Incorporation Dependence on the Thermal Growth Route in Dielectric/SiC Structures

Hydrogen Incorporation Dependence on the Thermal Growth Route in Dielectric/SiC Structures

Electric properties of La2O3/SiO2/4H-SiC MOS capacitors with different annealing temperatures

Device Processing Chain and Processing SiC in a Foundry Environment

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