Improvement of Er-silicide formation on Si(100) by W capping

Huang, Wei; Ru, Guo-Ping; Jiang, Yu-Long; Qu, Xin-Ping; Li, B.Z.; Liu, R.

doi:10.1016/j.tsf.2007.12.154

Cited by 12 publications

(17 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1. The resistivity values we have estimated from the reported sheet resistance data obtained by room temperature sputtering of Er followed by RTA to form ErSi 2 y are in agreement with the abovementioned resistivity obtained in this work (18,19).…”

Section: Resultssupporting

confidence: 90%

Properties of ErSi(2−x) Contacts Formed on Si(1−x)C(x) Epitaxial Layers

et al. 2009

View full text Add to dashboard Cite

Erbium silicide (ErSi2−y) formation was investigated on Si1−xCx epitaxial layers grown on Si substrates. The silicide ﬁlms were formed by rapid thermal annealing of sputter deposited erbium layers. The sheet resistance of the silicide ﬁlms formed on Si1−xCx epitaxial layers was found to be equal to or less than the sheet resistance of the ﬁlms formed on Si epitaxial layers. At 600{degree sign}C, an average resistivity of 114 was obtained. The silicide grains were found to be epitaxially aligned to the substrate along the (100) orientation regardless of the carbon concentration. Compositional analysis of the ﬁlms indicated carbon accumulation at the ErSi2−y/Si1−xCx interface with no carbon incorporation in the silicide. The ﬁlms formed on Si1−xCx epitaxial layers exhibited smooth surface morphology free of pinholes contrary to the silicides formed on Si. The electron Schottky barrier height of ErSi2−y/Si1−xCx diodes was found to reduce by 80meV with 1.2%C.

show abstract

Section: Resultssupporting

confidence: 90%

Properties of ErSi(2−x) Contacts Formed on Si(1−x)C(x) Epitaxial Layers

et al. 2009

View full text Add to dashboard Cite

show abstract

“…9 In consequence, the state-of-the-art SBH of 0.28 eV manifests the efficiency of the Ti capping to preserve the ErSi 2−x / Si interface from oxygen diffusing through the cap during the thermal treatment. 33 Finally, the low SBH also indicates that, contrary to W, 16 Ti does not diffuse to the ErSi 2−x / Si interface since the presence of interfacial Ti silicide would likely be responsible for a SBH augmentation owing to the high SBH of Ti silicide ͑around 0.6 eV͒. It is known that the presence of such a thin interfacial oxide before evaporation causes a dramatic increase in the SBH after heating.…”

Section: B Ti-capped Er On N-simentioning

confidence: 99%

“…However, RE silicides are easily removed in a solution containing halogen ions. W proves to be efficient to prevent oxidation but diffuses through the stack during the silicidation, 16 which could have a negative impact on the SBH. 18 A Si capping layer is also incompatible with modern CMOS technology since the silicidation is performed all over the wafer, creating a single silicide layer that short circuits all the devices.…”

Section: Introductionmentioning

confidence: 99%

Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap

Reckinger

Tang

Bayot

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inSchottky barrier heights of metal contacts to n -type gallium nitride with low-temperature-grown cap layerIn this paper, the formation of Er disilicide ͑ErSi 2−x ͒ with a Ti cap on low doping n-type Si͑100͒ is investigated. After deposition in ultrahigh vacuum, the solid-state reaction between Er and Si is performed ex situ by rapid thermal annealing between 450 and 600°C in a forming gas ambience with a 10 nm thick Ti capping layer to protect Er from oxidation. X-ray diffraction analyses have confirmed the formation of ErSi 2−x for all annealing temperatures. The formed films are found to be free of pinholes or pits and present a sharp and smooth interface with the Si bulk substrate. The extracted Schottky barrier height ͑SBH͒ corresponds to the state-of-the-art value of 0.28 eV if the annealing temperature is lower than or equal to 500°C. This result demonstrates the possibility to form low SBH ErSi 2−x / n-Si contacts with a protective Ti cap. However, when the annealing temperature is set to a higher value, the SBH concomitantly rises. Based on our experiments, this SBH increase can be mainly related to an enhanced diffusion of oxygen through the stack during the annealing, which degrades the quality of the ErSi 2−x film.

show abstract

“…9-11) and as materials for infrared detectors. 8,[17][18][19] In this article, we propose to scrutinize the chemical changes of thin erbium (Er) films deposited under high vacuum (HV) conditions on Si in the presence of residual oxygen after ex situ thermal treatment by x-ray photoelectron spectroscopy (XPS). However, the formation of one of these compounds is often accompanied with the formation of the other(s).…”

mentioning

confidence: 99%

Erbium Silicide Growth in the Presence of Residual Oxygen

Reckinger

Tang

Godey

et al. 2011

J. Electrochem. Soc.

View full text Add to dashboard Cite

The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited, annealed at 300{\deg}C, and annealed at 600{\deg}C. It was found that the presence of residual oxygen into the annealing atmosphere resulted in a substantial oxidation of the Er film surface, irrespective of the annealing temperature. However, the part of the Er film in intimate contact with the Si bulk formed a silicide (amorphous at 300{\deg}C and crystalline at 600{\deg}C) invariably free of oxygen, as testified by x-ray photoelectron spectroscopy depth profiling and Schottky barrier height extraction of 0.3 eV at 600{\deg}C. This proves that, even if Er is highly sensitive to oxygen contamination, the formation of low Schottky barrier Er silicide contacts on n-Si is quite robust. Finally, the production of stripped oxygen-free Er silicide was demonstrated after process optimization

show abstract

Improvement of Er-silicide formation on Si(100) by W capping

Cited by 12 publications

References 11 publications

Properties of ErSi(2−x) Contacts Formed on Si(1−x)C(x) Epitaxial Layers

Properties of ErSi(2−x) Contacts Formed on Si(1−x)C(x) Epitaxial Layers

Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap

Erbium Silicide Growth in the Presence of Residual Oxygen

Contact Info

Product

Resources

About