Improvement of Hydrogenated Amorphous-Silicon TFT Performances With Low-$k$Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation Layer

Abstract

A low-dielectric-constant (low-k)-material siloxanebased hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si : H TFTs). The low-k HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarization. In addition, the performance of a-Si : H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiN x )-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm 2 /V · s and a subthreshold swing of 0.68 V.

Photocurable transparent cycloaliphatic epoxy hybrid materials crosslinked by oxetane

“…Among the dielectric materials applied in TFTs, the passivation layer, in particular, should have a low dielectric constant to improve the performance of the TFT by a reduction of the capacitive coupling in the dielectric material 28–31. Figure 4 presents the variation of the dielectric constants of the CAEO and CAEO/DOX20 hybrimers as a function of frequency.…”

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

“…In 2004, Hosono et al made a breakthrough in replacing hydrogenated amorphous silicon (a-Si:H) and low-temperature polysilicon (LTPS) devices with amorphous oxide semiconductor in the fabrication of thin film transistors which were widely used in various display panels [ 1 ]. More recently, a-Si:H semiconductor has been excluded by most manufacturers because of its poor mobility, degradation under electrical bias stress, and instability under illumination [ 2 , 3 , 4 , 5 ]. In particular, LTPS is mostly used in active-matrix organic light emitting diode (AMOLED) displays with field effect mobility value of up to 100 cm 2 /Vs.…”

Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

“…6,7 However, it has been observed that the process for depositing passivation layer easily affected device characteristics. [8][9][10] This leaded the variation of intrinsic a-IZO characteristics not to be virtually presented out during electrical assessment. On the other hand, previous documents also have reported the impact of gate bias stress on the TCO-based TFT, but lacking of the studies on the relationship between gate biasinduced metastability and environmental factors, especially not for a-IZO TFT.…”