Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing

Abstract

We have studied the effect of thermal cyclic annealing (TCA) on the crystal quality improvement of MOCVD grown InP on GaAs substrates. The crystal quality has been evaluated by the etch pit density (EPD), X-ray diffraction and photoluminescence (PL) measurement. It is found that the TCA is effective in reducing the dislocation density, and that the annealing at 700°C is essential to confine the point defects near the InP/GaAs interface. The EPD is reduced from 6×107 cm-2 to 3×107 cm-2, and the defect-related PL peak intensity is decreased below the residual level in the 5 µm-thick InP on GaAs.

Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

“…31 Annealing reduced the DTD near the surface of a 3 m layer one order of magnitude, while it was higher than 10 8 cm −2 for the as-grown layers. 12 Note that the best present DTD results ͑ϳ10 8 cm −2 TDs for a 2 m InP layer after RTA͒ are comparable to the values typical of metamorphically grown InP layers 6 m or thicker 18 and that just 2 m has been established as the film thickness above, which the TDs amounts start to dramatically decrease with increasing thickness.…”

Fabrication and Thermal Budget Considerations of Advanced Ge and InP SOLES Substrates

“…• C in a tube furnace under N 2 ambient, as recommended by Hayafuji et al 22 Both the thicker film and thermal cycling increases the probability of dislocation interaction and annihilation. Finally, film quality was characterized using both cross-sectional and plan-view TEM on the [011] zone axis and [220] as well as the full-width at half-maximum (FWHM) of the InP rocking ω-2 curves in X-ray diffraction (XRD).…”

“…The optimal quality InP film growth sequence ultimately used in this work consisted of a 100 Å InP initiation layer grown at 400 • C with a V/III ratio of 2000, followed by raising the temperature to 600 • C for deposition of a thicker "bulk" InP layer. In order to further improve film quality, samples with progressively greater InP film thickness were grown, encapsulated with SiO 2 and then thermal cycled four (4) times between 250 • C and 800 • C in a tube furnace under N 2 ambient, as recommended by Hayafuji et al 22 Both the thicker film and thermal cycling increases the probability of dislocation interaction and annihilation. Finally, film quality was characterized using both cross-sectional and plan-view TEM on the [011] zone axis and [220] as well as the full-width at half-maximum (FWHM) of the InP rocking ω-2 curves in X-ray diffraction (XRD).…”

Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array

“…Therefore, techniques used to reduce threading dislocation, such as thermal annealing, are required. Thermal annealing has been widely used in heteroepitaxy, such as Ge/Si [16,17], GaAs/Si [18], HgCdTe/Si [19], and GaP/GaAs [20], to suppress threading dislocation and improve device performance. The high temperature of the annealing process has resulted in annihilation and coalescence of threading dislocations [19].…”