Improvement of SOI MOSFET RF Performance by Implant Optimization

Abstract

The characteristics of silicon on insulator MOSFETs are modified to enhance the RF performance by varying channel implants. Without adding new masks or fabrication steps to the standard CMOS process, this approach can be easily applied in standard foundry fabrication. The transconductance, output resistance, and breakdown voltage can be increased by eliminating channel and drain extension implants. As a result, the f max of the modified n-MOSFET with a 150 nm gate length exceeds 120 GHz, showing a 20% improvement over the standard MOSFET for digital circuits on the same wafer. Index Terms-Fully depleted silicon on insulator (FDSOI), mixed-signal CMOS, RF MOSFET, silicon on insulator (SOI).

Improvement of RF Performance by Using Tunnel Diode Body Contact Structure in PD SOI nMOSFETs

“…And the use of high resistivity substrates allows integration of high performance passive components such as high-Q inductors [2]. Floating body (FB) MOSFETs on SOI substrate are widely used in digital integrated circuit applications, while body-contact MOSFETs are used in analog application and RF applications because of the kink effect associated with FB devices, which reduces output resistance [3]- [5].…”

Linearity Distortion Assessment and Small-Signal Behavior of Nano-Scaled SOI MOSFET for Terahertz Applications

“…Various literatures are available that validate the FD SOI devices performance at high frequency levels. [26][27][28] Also, there are various design challenges at THz frequency range that must be encountred, like complete reception and transmission, i.e., lesser attenuation, better noise immunity and port matching should exist in the proposed design. 29,30 These challenges will counterpart the existance of centimeter-wave (cm-W) application to milimeter-wave (mm-W) applications and hence there is a need of advanced device designs for mm-W applications.…”