Improvement of the characteristics of ZnSe single-crystal semiconductor lasers pumped longitudinally by an electron beam

ZnSe-Based Room Temperature Low-Threshold Electron-Beam Pumped Semiconductor Laser

“…Electron beams with E e = 30-70 keV, commonly used in laser screen applications, have a penetration depth of a few microns. This makes difficult using bulk semiconductor crystals as the active elements, especially for lasers with longitudinal excitation, due to a rather complicated procedure of fabrication of relatively thin (10-50 mm) defect-free layers by mechanical treatment of the crystals [6,7]. Employing of epitaxial growth technologies for the active layer fabrication immediately resulted in a decrease of the threshold current density.…”