Improvement of the electrical properties of PECVD silicon oxide using high-density and low-ion-energy plasma post-treatment

Zhong, Chuan Jie; Tanaka, Hiroaki; Sugawa, Shigetoshi; Ohmi, Tadahiro

doi:10.1016/j.jnoncrysol.2005.06.016

Cited by 2 publications

(1 citation statement)

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“…11,[17][18][19][20] Fully oxidized SiO 2 has a refractive index of about 1.46 ͑at = 550 nm͒ and very low extinction coefficient in the visible and infrared light range. Silicon oxide films have been investigated extensively for their important applications in both microelectronic and optical technologies because of their excellent electrical and optical properties.…”

Section: Introductionmentioning

confidence: 99%

Graded refractive-index SiOx infrared filters prepared by reactive magnetron sputtering

Song

Huang

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inElectron-cyclotron-resonance sputtering apparatus for multilayered optical bandpass filters applicable to wavelength division multiplexing Fabrication and characteristics of rugate filters deposited by the TSH reactive sputtering method Dense, uniform SiO x ͑0 ഛ x ഛ 2͒ films were deposited by reactive magnetron sputtering. By controlling the oxygen flow rate and/or sputtering power during deposition, the refractive index of SiO x films can be continuously tuned from 1.44 to 3.69 at = 1550 nm. The authors fabricated an 11-layer bandpass filter of SiO x / SiO 2 with high refractive-index contrast ͑n H / n L = 1.91 at = 1550 nm͒ and a 35-layer SiO x optical filter with a graded refractive-index profile. The measured reflectance and transmittance spectra correlate well with the designed spectra. This work demonstrates that SiO x material can be used to make infrared optical filters with graded refractive index and high refractive-index contrast.

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