Articles you may be interested inLow-temperature (180°C) formation of large-grained Ge (111) thin film on insulator using accelerated metalinduced crystallization Appl. Phys. Lett. A hybrid kinetic Monte Carlo method for simulating silicon films grown by plasma-enhanced chemical vapor deposition J. Chem. Phys. 139, 204706 (2013); 10.1063/1.4830425 Hybrid-phase growth in microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition at low temperatures J. Appl. Phys. 97, 094910 (2005); 10.1063/1.1883720Direct low-temperature chemical vapor deposition of fully crystalline micro-and polycrystalline silicon thin films on SiO 2 using plasma immersion ion implantation Polycrystalline silicon is grown at a temperature of 300°C by microwave-excited plasma enhanced chemical vapor deposition using SiH 4 /Xe. The grain size measured by x-ray diffraction is about 25 nm. High-density (Ͼ10 12 cm Ϫ3 ) plasma having very low electron temperature ͑Ͻ1 eV͒ is excited by microwave irradiation using radial line slot antenna. We present the implementation of this system for the growth of poly-Si. Low-energy ͑3 eV͒, high-flux ion bombardment utilizing xenon ion on a growing film surface activates the film surface and successfully enhances surface reaction/migration of silicon, resulting in high quality film formation at low temperatures.

No abstract

No abstract

No abstract