Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment

Chen, Min Chen; Chang, Ting Chang; Huang, Sheng Yao; Chang, Kuan; Huang, Hui‐Chun; Chen, Shih Ching; Lu, Jui‐Han; Gan, Dershin; Ho, New-Jin; Young, Tai Fa; Jhang, Geng Wei; Tai, Ya‐Hsiang

doi:10.1016/j.surfcoat.2009.09.050

Cited by 13 publications

(3 citation statements)

References 22 publications

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“…The supercritical CO 2 (SCCO 2 ) fluid technology was used to improve the dielectric properties and performance of various thin film transistors (TFTs), such as hydrogenated amorphous-silicon TFTs and ZnO TFTs [ 134 - 138 ]. Therefore, the effect of SCCO 2 treatment on RRAM was worthy to evaluate for low temperature process [ 139 - 146 ].…”

Section: New Low Temperature Process Technology: Supercritical Fluidsmentioning

confidence: 99%

Physical and chemical mechanisms in oxide-based resistance random access memory

et al. 2015

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In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

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Section: New Low Temperature Process Technology: Supercritical Fluidsmentioning

confidence: 99%

Physical and chemical mechanisms in oxide-based resistance random access memory

et al. 2015

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show abstract

“…The supercritical CO 2 (SCCO 2 ) fluid technology was used to improve the dielectric properties and performance of various thin film transistors (TFTs), such as hydrogenated amorphous-silicon TFTs and ZnO TFTs [134][135][136][137][138]. Therefore, the effect of SCCO 2 treatment on RRAM was worthy to evaluate for low temperature process [139][140][141][142][143][144][145][146].…”

Section: New Low Temperature Process Technology: Supercritical Fluidsmentioning

confidence: 99%

Physical and chemical mechanisms in oxide-based resistance random access memory

Chang¹,

Chang²,

Tsai³

et al. 2016

Nano Online

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In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO 2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

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“…5,6 In our previous research, supercritical CO 2 (SCCO 2 ) fluid technology was used to improve the dielectric properties and performance of various thin film transistors (TFTs), such as hydrogenated amorphous-silicon TFTs and ZnO TFTs. [7][8][9][10][11][12][13] The liquid-like and gas-like double properties of SCCO 2 fluids can be used to dissolve and transport H 2 O molecules into the thin film and assist in oxidizing thin film at a low temperature. In addition, CO 2 is a nontoxic, nonflammable, and chemical-stable material.…”

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confidence: 99%

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

Tsai

Chang

et al. 2012

Applied Physics Letters

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The tin-doped can supply conduction path to induce resistance switching behavior. However, the defect of tin-doped silicon oxide (Sn:SiOx) increased the extra leakage path lead to power consumption and joule heating degradation. In the study, supercritical CO2 fluids treatment was used to improve resistive switching property. The current conduction of high resistant state in post-treated Sn:SiOx film was transferred to Schottky emission from Frenkel-Poole due to the passivation effect. The molecular reaction model is proposed that the defect was passivated through dehydroxyl effect of supercritical fluid technology, verified by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy.

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Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment

Cited by 13 publications

References 22 publications

Physical and chemical mechanisms in oxide-based resistance random access memory

Physical and chemical mechanisms in oxide-based resistance random access memory

Physical and chemical mechanisms in oxide-based resistance random access memory

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

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