Improvement of the Reproducibility of the Switching Voltage of Resistance Change Random Access Memory by Restricting Formation of Conductive Filaments

We have tried suppressing variation of switching voltages which hinder the practical application of resistive switching random access memory. On the basis of a filament model, fabrication of the top electrode with small enough size against the filament size and confining the filament are thought to be the solutions. In this study, we have investigated the confinement effects on the switching voltage variations using anodic porous alumina with ordered nano holes. Variation of the voltage has a trend to reduce with enlarging the diameters of nano holes by chemical etching. The confinement is very effective to improve the reproducibility of the switching voltages.

Section: Resultscontrasting

confidence: 69%

Effect of confining filaments on the current–voltage characteristics of resistive change memory by using anodic porous alumina

Tanimoto¹,

Otsuka²,

Shimizu³

et al. 2014

“…In our previous work, [26][27][28][29][30] we tried to confine filaments using ordered nanoholes (diameter, ∼40 nm) of anodic porous alumina (APA). In the case of as-grown APA, no improvement of switching behavior was seen because there is no confinement effect along the solid line shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Switching behavior of resistive change memory using oxide nanowires

Aono

Sugawa

Shimizu

et al. 2018

Resistive change random access memory (ReRAM), which is expected to be the next-generation nonvolatile memory, often has wide switching voltage distributions due to many kinds of conductive filaments. In this study, we have tried to suppress the distribution through the structural restriction of the filament-forming area using NiO nanowires. The capacitor with Ni metal nanowires whose surface is oxidized showed good switching behaviors with narrow distributions. The knowledge gained from our study will be very helpful in producing practical ReRAM devices.

“…1(a)] subjected by a limitation of the conductive filament forming area using nano-holes of an anodic porous alumina (APA). 25,26) The second is concentration of electric field applied to both electrodes using a nano peak 27) as a nano lighting rod as shown in Fig. 1(b).…”

Section: Introductionmentioning

confidence: 99%

Suppression of switching voltage variation by controlling filament formation in In/porous alumina/Al resistive change random access memory

Tanimoto¹,

Otsuka²,

Shimizu³

et al. 2015

Resistive change memory has been expected to be a next generation memory due to high-speed response. However, wide variations of switching voltages are often found in the current–voltage (I–V) characteristics and hinder the practical applications. We have tried suppressing the variation by three tactics based on the filament model; confinement of conductive filaments, concentration of electric field, and preparation of many routes for conductive filaments with the same electrical properties. In this study, we have investigated the combination of concentration of electric field method and preparation of many routes for conductive filaments in the insulator by electrochemical treatment (ET) using sulfuric acid. The I–V curves depend on the ET time. The best result is obtained in the long ET time. With regards to switching voltage distribution, the combination of two methods provide better switching characters than those of single method.