Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs

Abstract

Abstract-In this paper, Ni silicide is formed on boron cluster (B 18 H 22 ) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on B 18 H 22 implanted Si substrate exhibited greater sheet resistance than on the BF 2 implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using N 2 annealing.

Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

“…A pure Ni film was also deposited using 100 W RF power for comparison. The TiN capping layer is commonly used to prevent oxygen contamination during silicide formation [8]. The base pressure was under 5×10 -7 Torr and the working pressure was 2 mTorr with Ar plasma.…”

Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs

“…Due to the narrow line effect of Ti silicide and the large Si consumption of Co silicide, an alternative silicide is needed for nano-scale CMOSFETs. 4,5) Recently, Ni silicide (NiSi) has been considered as a promising substitute for Ti silicide and Co silicide. Ni silicide has several advantages over Ti silicide and Co silicide such as low resistivity (³14 µ³0cm), low thermal budget, no bridging failure properties, less mechanical stress, no narrow line effect, and less Si consumption.…”

“…Ni silicide has several advantages over Ti silicide and Co silicide such as low resistivity (³14 µ³0cm), low thermal budget, no bridging failure properties, less mechanical stress, no narrow line effect, and less Si consumption. [4][5][6][7] However, Ni silicide has poor thermal stability because of its morphological instability and phase transition to Ni disilicide (NiSi 2 , 35-50 µ³0cm) during thermal processes over 650 °C. [4][5][6][7] Therefore, improving its thermal stability has been a great challenge with Ni silicide.…”

“…[4][5][6][7] However, Ni silicide has poor thermal stability because of its morphological instability and phase transition to Ni disilicide (NiSi 2 , 35-50 µ³0cm) during thermal processes over 650 °C. [4][5][6][7] Therefore, improving its thermal stability has been a great challenge with Ni silicide. To improve the thermal stability of Ni silicide, various methods have been studied.…”

Improvement of Thermal Stability of Nickel Silicide Using Co-Sputtering of Ni and Ti on Boron Cluster Implanted Ultra-Shallow Junction for Nanoscale CMOS Technology

“…As a promising silicide for the future, thermal characteristics of Ni silicide on this kind of boron cluster implanted wafer have been studied [2][3][4]. In this work, we proposed Ni-silicide with a co-sputtering of Ni and Ti on boron cluster implanted substrate for improvement of the thermal stability of Ni-silicide.…”